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InAs/InAsSb Photovoltaic Detectors

Photovoltaic detectors (photodiodes) in which the semiconductor layer is made of InAs or InAsSb materials. Absorbed photons produce charge carriers that are collected at the ciodes have complex current voltage characteristics. The devices can operate either at flicker-free zero bias or with reverse voltage.

These detectors are cadmium and mercury free. As a result, the detectors comply with the RoHS directive and can be used in the consumer market.

Engineering samples

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Name

Cooling

Immersion

Peak wavelength

?

\(λ_{peak}\); \(µm\)

Detectivity

?

\(D*(λ_{peak})\); \(cm⋅Hz^{1/2}/W\)

Time constant

?

τ, ns

Package

Datasheet

Cooling

Two-stage TE cooled

Immersion

No

Wavelength

4.0±0.3

Detectivity

~7.0×10\(^9\)

Time constant

~10

Package

TO8

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All InAs and InAsSb Photovoltaic Detectors

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Image

Name

Cooling

Immersion

Peak wavelength

?

\(λ_{peak}\); \(µm\)

Detectivity

?

\(D*(λ_{peak})\); \(cm⋅Hz^{1/2}/W\)

Time constant

?

τ, ns

Package

Datasheet

Cooling

Uncooled

Immersion

No

Wavelength

2.9±0.3

Detectivity

≥ 5.0×10\(^{9}\)

Time constant

≤ 20

Package

TO39

Cooling

Uncooled

Immersion

No

Wavelength

4.5±0.6

Detectivity

≥ 5.0×10\(^{8}\)

Time constant

≤ 60

Package

TO39

Cooling

Two-stage TE cooled

Immersion

No

Wavelength

2.9±0.3

Detectivity

≥ 5.0×10\(^{10}\)

Time constant

≤ 15

Package

TO8

Cooling

Two-stage TE cooled

Immersion

No

Wavelength

4.5±0.6

Detectivity

≥ 4.0×10\(^{9}\)

Time constant

≤ 15

Package

TO8

Cooling

Uncooled

Immersion

Yes

Wavelength

2.9±0.3

Detectivity

≥ 5.0×10\(^{10}\)

Time constant

≤ 20

Package

TO39

Cooling

Uncooled

Immersion

Yes

Wavelength

4.5±0.6

Detectivity

≥ 5.0×10\(^{9}\)

Time constant

≤ 15

Package

TO39

Cooling

Two-stage TE cooled

Immersion

Yes

Wavelength

2.9±0.3

Detectivity

≥ 5.0×10\(^{11}\)

Time constant

≤ 15

Package

TO8

Cooling

Two-stage TE cooled

Immersion

Yes

Wavelength

4.5±0.6

Detectivity

≥ 4.0×10\(^{10}\)

Time constant

≤ 5

Package

TO8

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