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InAs/InAsSb Photovoltaic Detectors

Photovoltaic detectors (photodiodes) in which the semiconductor layer is made of InAs or InAsSb materials. Absorbed photons produce charge carriers that are collected at the ciodes have complex current voltage characteristics. The devices can operate either at flicker-free zero bias or with reverse voltage.

These detectors are cadmium and mercury free. As a result, the detectors comply with the RoHS directive and can be used in the consumer market.

InGaAs, InAs and InAsSb IR Detectors

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Name

Active element material

Cooling

Immersion

Optical area

?

Ao, mm×mm

dA, mm

Cut-on wavelength (10%)

?

λcut-on, μm

Peak wavelength

?

λpeak, μm

Cut-off wavelength (10%)

?

λcut-off, μm

Current responsivity

?

Ripeak), A/W

Detectivity

?

D* (λpeak, f = 20 kHz), cm⋅Hz1/2/W

Time constant

?

τ, ns

Package

Window

Material

InGaAs

Cooling

no

Immersion

no

Optical area

d1

cut-on_wavelength_cut_on

-

Peak wavelength

1.59

Cut-off wavelength cut-off

1.7

Responsivity

1.02

Detectivity

1.0×10\(^{12}\)

Time constant

0.89

Package

TO39

Window

BK7

Material

InAs

Cooling

no

Immersion

no

Optical area

1×1

cut-on_wavelength_cut_on

2.3

Peak wavelength

3.1

Cut-off wavelength cut-off

3.5

Responsivity

0.9

Detectivity

7.0×10\(^{9}\)

Time constant

35

Package

TO39

Window

no

Material

InAs

Cooling

no

Immersion

no

Optical area

d1.2

cut-on_wavelength_cut_on

1.3

Peak wavelength

2.9

Cut-off wavelength cut-off

3.6

Responsivity

0.55

Detectivity

5.0×10\(^{9}\)

Time constant

35

Package

SMD

Window

pAl2O3

Material

InAsSb

Cooling

no

Immersion

yes

Optical area

1×1

cut-on_wavelength_cut_on

2.3

Peak wavelength

4.0

Cut-off wavelength cut-off

5.6

Responsivity

1.4

Detectivity

1.7×10\(^{9}\)

Time constant

30

Package

TO39

Window

no

Material

InAsSb

Cooling

1TE

Immersion

no

Optical area

1×1

cut-on_wavelength_cut_on

2.0

Peak wavelength

4.0

Cut-off wavelength cut-off

5.5

Responsivity

0.18

Detectivity

1.0×10\(^{9}\)

Time constant

20

Package

TO39

Window

pSiAR

Material

InAsSb

Cooling

1TE

Immersion

no

Optical area

1×1

cut-on_wavelength_cut_on

2.0

Peak wavelength

4.4

Cut-off wavelength cut-off

6.6

Responsivity

0.18

Detectivity

4.3×10\(^{9}\)

Time constant

40

Package

TO39

Window

pSiAR

Material

InAsSb

Cooling

no

Immersion

yes

Optical area

1×1

cut-on_wavelength_cut_on

1.8

Peak wavelength

7.1

Cut-off wavelength cut-off

12.0

Responsivity

0.14

Detectivity

7.7×10\(^{8}\)

Time constant

1.65

Package

TO39

Window

no

Material

InAsSb

Cooling

4TE

Immersion

yes

Optical area

1×1

cut-on_wavelength_cut_on

1.8

Peak wavelength

6.7

Cut-off wavelength cut-off

11.3

Responsivity

0.55

Detectivity

1.0×10\(^{10}\)

Time constant

3

Package

TO8

Window

wZnSeAR

Material

InAsSb

Cooling

4TE

Immersion

yes

Optical area

1×1

cut-on_wavelength_cut_on

2.0

Peak wavelength

10.5

Cut-off wavelength cut-off

13.6

Responsivity

0.38

Detectivity

3.0×10\(^{9}\)

Time constant

3

Package

TO8

Window

wZnSeAR

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