InAsSb room temperature photovoltaic infrared detector
PVIA-5-1×1-TO39-NW-36
Features
Spectral range: 2.6 to 5.3 µm
III-V material
No minimum order quantity required
Applications
Gas detection (CO, CO2, NOx)
Contactless temperature measurements
Detector configuration
| Detector type | photovoltaic |
| Active element material | epitaxial InAs heterostructure |
| Optical area, Ao | 1 mm × 1 mm |
| Immersion | hyperhemisphere |
| Cooling | no |
| Package | TO39 |
| Acceptance angle, Φ | ~36 deg. |
| Window | no |
Specification
(Tchip = 293 K, Vb = 0 V, unless otherwise noted)
| Parameter | Value |
| Active element temperature, Tchip = Tamb | ~293 K |
| Cut-on wavelength, λcut-on (10%) | ≤ 2.6 μm |
| Peak wavelength, λpeak | 4.5 μm |
| Cut-on wavelength, λcut-off (10%) | ≥ 5.3 μm |
| Detectivity, D* (λpeak, f = 20 kHz) | ≥ 5.0×109 cm·Hz1/2/W |
| Current responsivity, Ri (λpeak) | ≥ 1.2 A/W |
| Time constant, τ | ≤ 15 ns |
| Resistance, R | ≥ 70 Ω |
Spectral response
(Typ., Tchip = 293 K)
Mechanical layout and pinout
(Unit: mm)
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Application notes
Temperature sensor characteristics
Related files
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