InAsSb room temperature photovoltaic infrared detector
PVIA-5-1×1-TO39-NW-36
PVIA-5-1×1-TO39-NW-36 is a room-temperature IR photovoltaic detector based on InAsSb heterostructure. It enables the detection of radiation in the range from 2.6 μm to 5.3 μm. The detector element is monolithically integrated with hiperhemispherical GaAs microlens in order to improve the performance of the device. The detector is mounted in the TO39 package without a window. It is mercury and cadmium-free and is fully compliant with the RoHS Directive.
Features
Spectral range: 2.6 to 5.3 µm
III-V material
No minimum order quantity required
Applications
Gas detection (CO, CO2, NOx)
Contactless temperature measurements
Detector configuration
| Detector type | photovoltaic |
| Active element material | epitaxial InAs heterostructure |
| Optical area, Ao | 1 mm × 1 mm |
| Immersion | hyperhemisphere |
| Cooling | no |
| Package | TO39 |
| Acceptance angle, Φ | ~36 deg. |
| Window | no |
Specification
(Tchip = 293 K, Vb = 0 V, unless otherwise noted)
| Parameter | Value |
| Active element temperature, Tchip = Tamb | ~293 K |
| Cut-on wavelength, λcut-on (10%) | ≤ 2.6 μm |
| Peak wavelength, λpeak | 4.5 μm |
| Cut-off wavelength, λcut-off (10%) | ≥ 5.3 μm |
| Detectivity, D* (λpeak, f = 20 kHz) | ≥ 5.0×109 cm·Hz1/2/W |
| Current responsivity, Ri (λpeak) | ≥ 1.2 A/W |
| Time constant, τ | ≤ 15 ns |
| Resistance, R | ≥ 70 Ω |
Spectral response
(Typ., Tchip = 293 K)
Mechanical layout and pinout
(Unit: mm)
Access to file
Access to this file is limited. In order to download it, please provide all the information and submit the form.
Application notes
Temperature sensor characteristics
Related files
Contact form
For more information, please contact us directly:
