InAsSb room temperature photovoltaic infrared detector



Spectral range: 2.6 to 5.3 µm

III-V material

No minimum order quantity required


Gas detection (CO, CO2, NOx)

Contactless temperature measurements

Detector configuration

Detector type photovoltaic
Active element material epitaxial InAs heterostructure
Optical area, Ao 1 mm × 1 mm
Immersion hyperhemisphere
Cooling no
Package TO39
Acceptance angle, Φ ~36 deg.
Window no


(Tchip = 293 K, Vb = 0 V, unless otherwise noted)

Parameter Value
Active element temperature, Tchip = Tamb ~293 K
Cut-on wavelength, λcut-on (10%) ≤ 2.6 μm
Peak wavelength, λpeak 4.5 μm
Cut-on wavelength, λcut-off (10%) ≥ 5.3 μm
Detectivity, D* (λpeak, f = 20 kHz) ≥ 5.0×109 cm·Hz1/2/W
Current responsivity, Ripeak) ≥ 1.2 A/W
Time constant, τ ≤ 15 ns
Resistance, R ≥ 70 Ω

Spectral response

(Typ., Tchip = 293 K)

Mechanical layout and pinout

(Unit: mm)


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Temperature sensor characteristics

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