InAsSb room-temperature optically immersed photovoltaic infrared detectorPVIA-5-1x1-TO39-NW-36

PVIA-5-1x1-TO39-NW-36 is an uncooled photovoltaic IR detector based on InAsSb heterostructure for optimal performance and stability, optically immersed to enhance the parameters. It enables the detection of radiation in the range from 2.6 μm to 5.3 μm. Its optical area (A_o) is 1 mm × 1 mm. The detector is available in the TO39 package without a window.

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Features

Spectral range: 2.6 to 5.3 µm

RoHS-compliant III-V material

High ambient operating and storage temperature

Unique optical immersion technology applied

Back-side illuminated

No minimum order quantity required

Applications

Contactless temperature measurement: railway transport, industrial and laboratory processes monitoring

Flame and explosion detection

Threat warning systems

Heat-seeking, thermal signature detection

Dentistry

Gas detection, monitoring and analysis: CH4, C2H2, CH2O, HCl, NH3, SO2, C2H6, CO, CO2, NOx

Breath analysis: C2H6, CH2O, NH3, NO, OCS

Gas leak detection

Combustion process control

Non-destructive material testing

Detector configuration

Detector symbol	PVIA-5-1x1-TO39-NW-36
Detector type	photovoltaic
Active element material	epitaxial InAsSb heterostructure
Cooling	no
Temperature sensor	n/a
Optical area, A_o	1 mm × 1 mm
Optical immersion	hyperhemisphere
Package	TO39 (3 pin)
Acceptance angle, Φ	~36 deg.
Window	no

Specification

(T_amb = T_chip = 293 K, V_b = 0 V)

Parameter	Value			Unit
	Min.	Typ.	Max
Cut-on wavelength, λ_cut-on (10%)	-	2.3	-	μm
Peak wavelength, λ_peak	-	4.0±0.5	-	μm
Cut-off wavelength, λ_cut-off (10%)	-	5.6	-	μm
Detectivity, D* (λ_peak, f = 20 kHz)	5.0×10⁹	1.7×10¹⁰	-	cm·Hz^1/2/W
Current responsivity, R_i (λ_peak)	1.2	1.4	-	A/W
Time constant, τ	-	30	-	ns
Dynamic resistance, R_d	80	150	-	Ω