home-icon/Products / Infrared detectors / InAs and InAsSb detectors / InAsSb photovoltaic IR detector PVMA-1TE-6-1×1-TO39-pSiAR-70

InAsSb one-stage thermoelectrically-cooled photovoltaic multi-junction infrared detectorPVMA-1TE-6-1×1-TO39-pSiAR-70

PVMA-1TE-6-1×1-TO39-pSiAR-70 is a one-stage thermoelectrically cooled photovoltaic multi-junction IR detector based on InAsSb heterostructure for optimal performance and stability. It enables the detection of radiation in the range from 2.2 μm to 6.6 μm. Its active area (A) is 1 mm × 1 mm. The detector is available in the TO39 package with a planar silicon anti-reflection coating window (pSiAR).

Features

Spectral range: 2.2 to 6.6 µm

RoHS compliant III-V material

Back-side illuminated

One-stage thermoelectrically cooled

Long term stability

No minimum order quantity required

Applications

Gas detection, monitoring and analysis: CH4, C2H2, CH2O, HCl, NH3, SO2, C2H6, CO, CO2, NOx, SOx, HNO3

Exhaust gas denitrification

Combustion process control

Contactless temperature measurement: railway transport, industrial and laboratory processes monitoring

Heat-seeking, thermal signature detection

Non-destructive material testing

Biochemical analysis

Laser calibration

Detector configuration

Detector symbol PVMA-1TE-6-1×1-TO39-pSiAR-70
Detector type photovoltaic, multi-junction
Active element material epitaxial InAsSb heterostructure
Cooling 1TE (Tchip ≅ 253 K)
Temperature sensor thermistor
Active area, A 1 mm × 1 mm
Optical immersion no
Package 1TE-TO39 (8 pin)
Acceptance angle, Φ ~70 deg.
Window pSiAR (planar silicon, anti-reflection coating)

Specification

(Tamb = 293 K, Tchip = 253 K, Vb = 0 V)

Parameter Value Unit
Min. Typ. Max
Cut-on wavelength, λcut-on (10%) 2.0 μm
Peak wavelength, λpeak 4.4±0.5 μm
Cut-off wavelength, λcut-off (10%) 6.6 μm
Detectivity, D* (λpeak, f = 20 kHz) 1.4×109 4.3×109 cm·Hz1/2/W
Current responsivity, Ripeak) 0.08 0.18 A/W
Time constant, τ 40 200  ns
Dynamic resistance, Rd 300 800 Ω

Spectral response

(Typ., Tamb = 293 K, Tchip = 253 K)

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Temperature sensor characteristics

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