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InAsSb one-stage TE cooled photovoltaic multi-junction infrared detector


PVMA-1TE-6-1×1-TO39-pSiAR-70 is a one-stage thermoelectrically cooled IR photovoltaic mulit-junction detector based on InAsSb heterostructure. It enables the detection of radiation in the range from 2.2 μm to 6.6 μm.
The detector is mounted in the TO39 package and hermetically sealed with a planar anti-reflective silicon window. It is mercury and cadmium-free and is fully compliant with the RoHS Directive.


Spectral range: 2.2 to 6.6 µm

III-V material

No minimum order quantity required


Gas detection (CO, CO2, NH3, NOx)

Detector configuration

Detector type photovoltaic, multi-junction
Active element material epitaxial InAsSb heterostructure
Active area, A 1 mm × 1 mm
Immersion no
Cooling 1TE
Package TO39
Acceptance angle, Φ ~70 deg.
Window pSiAR

(planar silicon, anti-reflection coating)


(Tamb = 293 K, Tchip = 253 K, Vb = 0 V, unless otherwise noted)

Parameter Typical value
Active element temperature, Tchip 253 K
Cut-on wavelength, λcut-on (10%) 2.2 μm
Peak wavelength, λpeak 4.3 μm
Cut-off wavelength, λcut-off (10%) 6.6 μm
Detectivity, D* (λpeak, f = 20 kHz) 4.3×109 cm·Hz1/2/W
Current responsivity, Ripeak) 0.18 A/W
Time constant, τ 48 ns
Resistance, R 900 Ω


(Tamb = 293 K, Tchip = 293 K, Vb = 0 V, unless otherwise noted)

Parameter Typical value
Active element temperature, Tchip 293 K
Cut-on wavelength, λcut-on (10%) 1.7 μm
Peak wavelength, λpeak 4.5 μm
Cut-on wavelength, λcut-off (10%) 7.1 μm
Detectivity, D* (λpeak, f = 20 kHz) 6.9×108 cm·Hz1/2/W
Current responsivity, Ripeak) 0.08 A/W
Time constant, τ 40 ns
Resistance, R 110 Ω

Spectral response

(Typ., Tamb = 293 K)

Mechanical layout and pinout

(Unit: mm)


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Temperature sensor characteristics

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