home-icon/Products / Infrared detectors / InAs and InAsSb detectors / PVMA-1TE-6-1×1-TO39-pSiAR-70

InAsSb one-stage TE cooled photovoltaic multi-junction infrared detector

PVMA-1TE-6-1×1-TO39-pSiAR-70

Features

Spectral range: 2.2 to 6.6 µm

III-V material

No minimum order quantity required

Applications

Gas detection (CO, CO2, NH3, NOx)

Detector configuration

Detector type photovoltaic, multi-junction
Active element material epitaxial InAsSb heterostructure
Active area, A 1 mm × 1 mm
Immersion no
Cooling 1TE
Package TO39
Acceptance angle, Φ ~70 deg.
Window pSiAR

(planar silicon, anti-reflection coating)

Specification

(Tamb = 293 K, Tchip = 253 K, Vb = 0 V, unless otherwise noted)

Parameter Typical value
Active element temperature, Tchip 253 K
Cut-on wavelength, λcut-on (10%) 2.2 μm
Peak wavelength, λpeak 4.3 μm
Cut-on wavelength, λcut-off (10%) 6.6 μm
Detectivity, D* (λpeak, f = 20 kHz) 4.3×109 cm·Hz1/2/W
Current responsivity, Ripeak) 0.18 A/W
Time constant, τ 48 ns
Resistance, R 900 Ω

Specification

(Tamb = 293 K, Tchip = 293 K, Vb = 0 V, unless otherwise noted)

Parameter Typical value
Active element temperature, Tchip 293 K
Cut-on wavelength, λcut-on (10%) 1.7 μm
Peak wavelength, λpeak 4.5 μm
Cut-on wavelength, λcut-off (10%) 7.1 μm
Detectivity, D* (λpeak, f = 20 kHz) 6.9×108 cm·Hz1/2/W
Current responsivity, Ripeak) 0.08 A/W
Time constant, τ 40 ns
Resistance, R 110 Ω

Spectral response

(Typ., Tamb = 293 K)

Mechanical layout and pinout

(Unit: mm)

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