InAsSb one-stage TE cooled photovoltaic multi-junction infrared detector
PVMA-1TE-6-1×1-TO39-pSiAR-70
Features
Spectral range: 2.2 to 6.6 µm
III-V material
No minimum order quantity required
Applications
Gas detection (CO, CO2, NH3, NOx)
Detector configuration
| Detector type | photovoltaic, multi-junction |
| Active element material | epitaxial InAsSb heterostructure |
| Active area, A | 1 mm × 1 mm |
| Immersion | no |
| Cooling | 1TE |
| Package | TO39 |
| Acceptance angle, Φ | ~70 deg. |
| Window | pSiAR
(planar silicon, anti-reflection coating) |
Specification
(Tamb = 293 K, Tchip = 253 K, Vb = 0 V, unless otherwise noted)
| Parameter | Typical value |
| Active element temperature, Tchip | 253 K |
| Cut-on wavelength, λcut-on (10%) | 2.2 μm |
| Peak wavelength, λpeak | 4.3 μm |
| Cut-on wavelength, λcut-off (10%) | 6.6 μm |
| Detectivity, D* (λpeak, f = 20 kHz) | 4.3×109 cm·Hz1/2/W |
| Current responsivity, Ri (λpeak) | 0.18 A/W |
| Time constant, τ | 48 ns |
| Resistance, R | 900 Ω |
Specification
(Tamb = 293 K, Tchip = 293 K, Vb = 0 V, unless otherwise noted)
| Parameter | Typical value |
| Active element temperature, Tchip | 293 K |
| Cut-on wavelength, λcut-on (10%) | 1.7 μm |
| Peak wavelength, λpeak | 4.5 μm |
| Cut-on wavelength, λcut-off (10%) | 7.1 μm |
| Detectivity, D* (λpeak, f = 20 kHz) | 6.9×108 cm·Hz1/2/W |
| Current responsivity, Ri (λpeak) | 0.08 A/W |
| Time constant, τ | 40 ns |
| Resistance, R | 110 Ω |
Spectral response
(Typ., Tamb = 293 K)
Mechanical layout and pinout
(Unit: mm)
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Application notes
Temperature sensor characteristics
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