InAsSb one-stage TE cooled photovoltaic multi-junction infrared detector
PVMA-1TE-6-1×1-TO39-pSiAR-70
PVMA-1TE-6-1×1-TO39-pSiAR-70 is a one-stage thermoelectrically cooled IR photovoltaic mulit-junction detector based on InAsSb heterostructure. It enables the detection of radiation in the range from 2.2 μm to 6.6 μm.
The detector is mounted in the TO39 package and hermetically sealed with a planar anti-reflective silicon window. It is mercury and cadmium-free and is fully compliant with the RoHS Directive.
Features
Spectral range: 2.2 to 6.6 µm
III-V material
No minimum order quantity required
Applications
Gas detection (CO, CO2, NH3, NOx)
Detector configuration
| Detector type | photovoltaic, multi-junction |
| Active element material | epitaxial InAsSb heterostructure |
| Active area, A | 1 mm × 1 mm |
| Immersion | no |
| Cooling | 1TE |
| Package | TO39 |
| Acceptance angle, Φ | ~70 deg. |
| Window | pSiAR
(planar silicon, anti-reflection coating) |
Specification
(Tamb = 293 K, Tchip = 253 K, Vb = 0 V, unless otherwise noted)
| Parameter | Typical value |
| Active element temperature, Tchip | 253 K |
| Cut-on wavelength, λcut-on (10%) | 2.2 μm |
| Peak wavelength, λpeak | 4.3 μm |
| Cut-off wavelength, λcut-off (10%) | 6.6 μm |
| Detectivity, D* (λpeak, f = 20 kHz) | 4.3×109 cm·Hz1/2/W |
| Current responsivity, Ri (λpeak) | 0.18 A/W |
| Time constant, τ | 48 ns |
| Resistance, R | 900 Ω |
Specification
(Tamb = 293 K, Tchip = 293 K, Vb = 0 V, unless otherwise noted)
| Parameter | Typical value |
| Active element temperature, Tchip | 293 K |
| Cut-on wavelength, λcut-on (10%) | 1.7 μm |
| Peak wavelength, λpeak | 4.5 μm |
| Cut-on wavelength, λcut-off (10%) | 7.1 μm |
| Detectivity, D* (λpeak, f = 20 kHz) | 6.9×108 cm·Hz1/2/W |
| Current responsivity, Ri (λpeak) | 0.08 A/W |
| Time constant, τ | 40 ns |
| Resistance, R | 110 Ω |
Spectral response
(Typ., Tamb = 293 K)
Mechanical layout and pinout
(Unit: mm)
Access to file
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Application notes
Temperature sensor characteristics
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