InAsSb room temperature optically immersed photovoltaic infrared detector
PVIA-10.6-1×1-TO39-NW-36
Features
Spectral range: 1.8 to 12.0 µm
III-V material
No minimum order quantity required
Applications
CO2 laser (10.6 um) measurements
Detector configuration
| Detector type | photovoltaic |
| Active element material | epitaxial InAs heterostructure |
| Optical area, Ao | 1 mm × 1 mm |
| Immersion | hyperhemisphere |
| Cooling | no |
| Package | TO39 |
| Acceptance angle, Φ | ~36 deg. |
| Window | no |
Specification
(Tchip = 293 K, Vb = 0 V, unless otherwise noted)
| Parameter | Typical value |
| Active element temperature, Tchip = Tamb | 293 K |
| Cut-on wavelength, λcut-on (10%) | 1.8 μm |
| Peak wavelength, λpeak | 7.1 μm |
| Cut-on wavelength, λcut-off (10%) | 12.0 μm |
| Detectivity, D* (λpeak, f = 20 kHz) | 7.7×108 cm·Hz1/2/W |
| Current responsivity, Ri (λpeak) | 0.14 A/W |
| Time constant, τ | 1.65 ns |
| Resistance, R | 51 Ω |
Spectral response
(Typ., Tchip = 293 K)
Mechanical layout and pinout
(Unit: mm)
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Application notes
Temperature sensor characteristics
Related files
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