InAsSb room temperature optically immersed photovoltaic infrared detector
PVIA-10.6-1×1-TO39-NW-36
PVIA-10.6-1×1-TO39-NW-36 is a room-temperature IR photovoltaic detector based on InAs/InAsSb superlattice heterostructure. It enables the detection of radiation in the range from 1.8 μm to 12 μm. The detector element is monolithically integrated with hiperhemispherical GaAs microlens in order to improve the performance of the device. The detector is mounted in the TO39 package without a window. It is mercury and cadmium-free and is fully compliant with the RoHS Directive.
Features
Spectral range: 1.8 to 12.0 µm
III-V material
No minimum order quantity required
Applications
CO2 laser (10.6 um) measurements
Detector configuration
| Detector type | photovoltaic |
| Active element material | epitaxial InAs heterostructure |
| Optical area, Ao | 1 mm × 1 mm |
| Immersion | hyperhemisphere |
| Cooling | no |
| Package | TO39 |
| Acceptance angle, Φ | ~36 deg. |
| Window | no |
Specification
(Tchip = 293 K, Vb = 0 V, unless otherwise noted)
| Parameter | Typical value |
| Active element temperature, Tchip = Tamb | 293 K |
| Cut-on wavelength, λcut-on (10%) | 1.8 μm |
| Peak wavelength, λpeak | 7.1 μm |
| Cut-off wavelength, λcut-off (10%) | 12.0 μm |
| Detectivity, D* (λpeak, f = 20 kHz) | 7.7×108 cm·Hz1/2/W |
| Current responsivity, Ri (λpeak) | 0.14 A/W |
| Time constant, τ | 1.65 ns |
| Resistance, R | 51 Ω |
Spectral response
(Typ., Tchip = 293 K)
Mechanical layout and pinout
(Unit: mm)
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Application notes
Temperature sensor characteristics
Related files
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