InAsSb room temperature optically immersed photovoltaic infrared detector
PVIA-10.6-1×1-TO39-NW-36 is a room-temperature IR photovoltaic detector based on InAs/InAsSb superlattice heterostructure. It enables the detection of radiation in the range from 1.8 μm to 12 μm. The detector element is monolithically integrated with hiperhemispherical GaAs microlens in order to improve the performance of the device. The detector is mounted in the TO39 package without a window. It is mercury and cadmium-free and is fully compliant with the RoHS Directive.
Spectral range: 1.8 to 12.0 µm
No minimum order quantity required
CO2 laser (10.6 um) measurements
|Active element material||epitaxial InAs heterostructure|
|Optical area, Ao||1 mm × 1 mm|
|Acceptance angle, Φ||~36 deg.|
(Tchip = 293 K, Vb = 0 V, unless otherwise noted)
|Active element temperature, Tchip = Tamb||293 K|
|Cut-on wavelength, λcut-on (10%)||1.8 μm|
|Peak wavelength, λpeak||7.1 μm|
|Cut-off wavelength, λcut-off (10%)||12.0 μm|
|Detectivity, D* (λpeak, f = 20 kHz)||7.7×108 cm·Hz1/2/W|
|Current responsivity, Ri (λpeak)||0.14 A/W|
|Time constant, τ||1.65 ns|
|Resistance, R||51 Ω|
(Typ., Tchip = 293 K)
Mechanical layout and pinout
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Temperature sensor characteristics
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