home-icon/Products / Infrared detectors / InAs and InAsSb detectors / InAsSb room temperature optically immersed photovoltaic infrared detector PVIA-10.6-1×1-TO39-NW-36

InAsSb room temperature optically immersed photovoltaic infrared detectorPVIA-10.6-1×1-TO39-NW-36

PVIA-10.6-1×1-TO39-NW-36 is a room-temperature IR photovoltaic detector based on InAs/InAsSb superlattice heterostructure. It enables the detection of radiation in the range from 1.8 μm to 12 μm. The detector element is monolithically integrated with hiperhemispherical GaAs microlens in order to improve the performance of the device. The detector is mounted in the TO39 package without a window. It is mercury and cadmium-free and is fully compliant with the RoHS Directive.


Spectral range: 1.8 to 12.0 µm

III-V material

No minimum order quantity required


CO2 laser (10.6 um) measurements

Detector configuration

Detector type photovoltaic
Active element material epitaxial InAs/InAsSb superlattice heterostructure
Optical area, Ao 1 mm × 1 mm
Immersion hyperhemisphere
Cooling no
Package TO39
Acceptance angle, Φ ~36 deg.
Window no


(Tchip = 293 K, Vb = 0 V, unless otherwise noted)

Parameter Typical value
Active element temperature, Tchip = Tamb 293 K
Cut-on wavelength, λcut-on (10%) 1.8 μm
Peak wavelength, λpeak 7.1 μm
Cut-off wavelength, λcut-off (10%) 12.0 μm
Detectivity, D* (λpeak, f = 20 kHz) 7.7×108 cm·Hz1/2/W
Current responsivity, Ripeak) 0.14 A/W
Time constant, τ 1.65 ns
Resistance, R 51 Ω

Spectral response

(Typ., Tchip = 293 K)

Mechanical layout and pinout

(Unit: mm)


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Temperature sensor characteristics

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