home-icon/Products / Infrared detectors / InAs and InAsSb detectors / PVIA-10.6-1×1-TO39-NW-36

InAsSb room temperature optically immersed photovoltaic infrared detector



Spectral range: 1.8 to 12.0 µm

III-V material

No minimum order quantity required


CO2 laser (10.6 um) measurements

Detector configuration

Detector type photovoltaic
Active element material epitaxial InAs heterostructure
Optical area, Ao 1 mm × 1 mm
Immersion hyperhemisphere
Cooling no
Package TO39
Acceptance angle, Φ ~36 deg.
Window no


(Tchip = 293 K, Vb = 0 V, unless otherwise noted)

Parameter Typical value
Active element temperature, Tchip = Tamb 293 K
Cut-on wavelength, λcut-on (10%) 1.8 μm
Peak wavelength, λpeak 7.1 μm
Cut-on wavelength, λcut-off (10%) 12.0 μm
Detectivity, D* (λpeak, f = 20 kHz) 7.7×108 cm·Hz1/2/W
Current responsivity, Ripeak) 0.14 A/W
Time constant, τ 1.65 ns
Resistance, R 51 Ω

Spectral response

(Typ., Tchip = 293 K)

Mechanical layout and pinout

(Unit: mm)


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Temperature sensor characteristics

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