InAs room temperature photovoltaic infrared detector
PVA-3-d1.2-SMD-pAl2O3-115
Features
Spectral range: 1.3 to 3.6 µm
III-V material
No minimum order quantity required
Applications
Gas detection (CO, HF, NH3, C2H2, CH4, C2H6, HCl)
Detector configuration
Detector type | photovoltaic |
Active element material | epitaxial InAs heterostructure |
Active area diameter, dA | 1.2 mm |
Immersion | no |
Cooling | no |
Package | SMD |
Acceptance angle, Φ | ≥115 deg. |
Window | pAl2O3 (planar sapphire) |
Specification
(Tchip = 293 K, Vb = 0 V, unless otherwise noted)
Parameter | Typical value |
Active element temperature, Tchip = Tamb | 293 K |
Cut-on wavelength, λcut-on (10%) | 1.3 μm |
Peak wavelength, λpeak | 2.9 μm |
Cut-on wavelength, λcut-off (10%) | 3.6 μm |
Detectivity, D* (λpeak, f = 20 kHz) | 5.0×109 cm·Hz1/2/W |
Current responsivity, Ri (λpeak) | 0.6 A/W |
Time constant, τ | 35 ns |
Resistance, R | 85 Ω |
Spectral response
(Typ., Tchip = 293 K)

Mechanical layout
(Unit: mm)

Access to file
Access to this file is limited. In order to download it, please provide all the information and submit the form.
Application notes
Temperature sensor characteristics
Contact form