home-icon/Products / Infrared detectors / InAs and InAsSb detectors / PVA-3-d1.2-SMD-pAl2O3-115

InAs room temperature photovoltaic infrared detector

PVA-3-d1.2-SMD-pAl2O3-115

Features

Spectral range: 1.3 to 3.6 µm

III-V material

No minimum order quantity required

Applications

Gas detection (CO, HF, NH3, C2H2, CH4, C2H6, HCl)

Detector configuration

Detector type photovoltaic
Active element material epitaxial InAs heterostructure
Active area diameter, dA 1.2 mm
Immersion no
Cooling no
Package SMD
Acceptance angle, Φ ≥115 deg.
Window pAl2O3 (planar sapphire)

Specification

(Tchip = 293 K, Vb = 0 V, unless otherwise noted)

Parameter Typical value
Active element temperature, Tchip = Tamb 293 K
Cut-on wavelength, λcut-on (10%) 1.3 μm
Peak wavelength, λpeak 2.9 μm
Cut-on wavelength, λcut-off (10%) 3.6 μm
Detectivity, D* (λpeak, f = 20 kHz) 5.0×109 cm·Hz1/2/W
Current responsivity, Ripeak) 0.6 A/W
Time constant, τ 35 ns
Resistance, R 85 Ω

Spectral response

(Typ., Tchip = 293 K)

Mechanical layout

(Unit: mm)

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Temperature sensor characteristics

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