InAs room temperature photovoltaic infrared detector
PVA-3-d1.2-SMD-pAl2O3-115
Features
Spectral range: 1.3 to 3.6 µm
III-V material
No minimum order quantity required
Applications
Gas detection (CO, HF, NH3, C2H2, CH4, C2H6, HCl)
Detector configuration
| Detector type | photovoltaic |
| Active element material | epitaxial InAs heterostructure |
| Active area diameter, dA | 1.2 mm |
| Immersion | no |
| Cooling | no |
| Package | SMD |
| Acceptance angle, Φ | ≥115 deg. |
| Window | pAl2O3 (planar sapphire) |
Specification
(Tchip = 293 K, Vb = 0 V, unless otherwise noted)
| Parameter | Typical value |
| Active element temperature, Tchip = Tamb | 293 K |
| Cut-on wavelength, λcut-on (10%) | 1.3 μm |
| Peak wavelength, λpeak | 2.9 μm |
| Cut-on wavelength, λcut-off (10%) | 3.6 μm |
| Detectivity, D* (λpeak, f = 20 kHz) | 5.0×109 cm·Hz1/2/W |
| Current responsivity, Ri (λpeak) | 0.6 A/W |
| Time constant, τ | 35 ns |
| Resistance, R | 85 Ω |
Spectral response
(Typ., Tchip = 293 K)
Mechanical layout
(Unit: mm)
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Application notes
Temperature sensor characteristics
Related files
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