InAs room temperature, photovoltaic infrared detector
PVA-3-1×1-TO39-NW-90
Features
Spectral range: 2.3 to 3.5 µm
III-V material
No minimum order quantity required
Applications
Gas detection (CO, HF, NH3, C2H2, CH4, C2H6, HCl)
Detector configuration
Detector type | photovoltaic |
Active element material | epitaxial InAs heterostructure |
Active area, A | 1 mm × 1 mm |
Immersion | no |
Cooling | no |
Package | TO39 |
Acceptance angle, Φ | ~90 deg. |
Window | no |
Specification
(Tchip = 293 K, Vb = 0 V, unless otherwise noted)
Parameter | Typical value |
Active element temperature, Tchip = Tamb | 293 K |
Cut-on wavelength, λcut-on (10%) | 2.3 μm |
Peak wavelength, λpeak | 3.1 μm |
Cut-on wavelength, λcut-off (10%) | 3.5 μm |
Detectivity, D* (λpeak, f = 20 kHz) | 7.0×109 cm·Hz1/2/W |
Current responsivity, Ri (λpeak) | 0.9 A/W |
Time constant, τ | 35 ns |
Resistance, R | 90 Ω |
Spectral response
(Typ., Tchip = 293 K)

Mechanical layout and pinout
(Unit: mm)

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Application notes
Temperature sensor characteristics
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