InAsSb superlattice four-stage thermoelectrically-cooled optically immersed photovoltaic infrared detectorsPVIA-4TE-10.6-1x1-TO8-wZnSeAR-36
PVIA-4TE-10.6-1x1-TO8-wZnSeAR-36 is a four-stage thermoelectrically cooled (4TE) photovoltaic IR detector based on InAsSb superlattice heterostructure for optimal performance and stability, optically immersed to enhance the parameters. It enables the detection of radiation in the range from 1.8 μm to 11.3 μm. Its optical area (Ao) is 1 mm × 1 mm. The detector is available in the TO8 package with a 3 deg. wedged zinc selenide anti-reflection coating window (wZnSeAR) to prevent unwanted interference effects.
Features
Spectral range: 1.8 to 11.3 µm
RoHS-compliant III-V material
Unique optical immersion technology applied
Back-side illuminated
Four-stage thermoelectricaly cooled
Long term stability
Fast response
No minimum order quantity required
Applications
Gas detection, monitoring and analysis: SO2, NH3, SF6
CBRN threats detection
CO2 laser measurements (power monitoring and control, beam profiling and positioning, calibration)
Free-space optical communication
FTIR spectroscopy
Medical bacteria identification
Dentistry
Glucose sensing
Detector configuration
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Detector symbol
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PVIA-4TE-10.6-1x1-TO8-wZnSeAR-36 |
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Detector type
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photovoltaic |
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| Active element material | epitaxial InAsSb superlattice heterostructure | |
| Cooling | 4TE (Tchip ≅ 200 K) | |
| Temperature sensor | thermistor | |
| Optical area, Ao | 1 mm × 1 mm | |
| Optical immersion | hyperhemisphere | |
| Package | 4TE-TO8 | |
| Acceptance angle, Φ | ~36 deg. | |
| Window | wZnSeAR (3 deg. wedged zinc selenide, anti-reflection coating) | |
Specification
(Tamb = 293 K, Tchip = 200 K, Vb = 0 V)
| Parameter | Value | Unit | ||
| Min. | Typ. | Max | ||
| Cut-on wavelength, λcut-on (10%) | - | 1.8 | - | μm |
| Peak wavelength, λpeak | - | 6.7 | - | μm |
| Cut-off wavelength, λcut-off (10%) | - | 11.3 | - | μm |
| Detectivity, D* (λpeak, f = 20 kHz) | 8.0×109 | 1.0×1010 | - | cm·Hz1/2/W |
| Current responsivity, Ri (λpeak) | 0.45 | 0.55 | - | A/W |
| Time constant, τ | - | 3 | 5 | ns |
| Dynamic resistance, Rd | 350 | 500 | - | Ω |
Spectral response
(Typ., Tamb = 293 K, Tchip = 200 K)
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Application notes
Temperature sensor characteristics
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