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HgCdTe two-stage thermoelectrically cooled photoconductive infrared detectorsPC-2TE-5-1x1-TO8/TO66-wAl2O3-70
PC-2TE-5-1x1-TO8-wZnSeAR-70 and PC-2TE-5-1x1-TO66-wZnSeAR-70 are two-stage thermoelectrically cooled (2TE) photoconductive IR detectors based on HgCdTe heterostructures for optimal performance and stability. Their specific wavelength (λspec) is 5.0 µm and their active area (A) is 1 mm × 1 mm. The detectors should operate in optimum bias voltage (Vb) and current readout mode. Performance at low frequencies is reduced due to 1/f noise. The detectors are available in TO8 and TO66 packages with a 3 deg. wedged sapphire window (wAl2O3) to prevent unwanted interference effects.
Features
Spectral range: over 5.6 µm
Large active area
Front-side illuminated
Two-stage thermoelectrically cooled
No minimum order quantity required
Applications
Contactless temperature measurement: railway transport, industrial and laboratory processes monitoring
Flame and explosion detection
Threat warning systems
Heat-seeking, thermal signature detection
Dentistry
Gas detection, monitoring and analysis: CH4, C2H2, CH2O, HCl, NH3, SO2, C2H6, CO, CO2, NOx
Breath analysis: C2H6, CH2O, NH3, NO, OCS
Gas leak detection
Combustion process control
Non-destructive material testing
Detector configuration
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Detector symbol
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PC-2TE-5-1x1-TO8-wAl2O3-70 |
PC-2TE-5-1x1-TO66-wAl2O3-70 |
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Detector type
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photoconductive |
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| Active element material | epitaxial HgCdTe heterostructure | |
| Cooling | 2TE (Tchip ≅ 230 K) | |
| Temperature sensor | thermistor | |
| Active area, A | 1 mm × 1 mm | |
| Optical immersion | no | |
| Package | 2TE-TO8 | 2TE-TO66 |
| Acceptance angle, Φ | ~70 deg. | |
| Window | wAl2O3 (3 deg. wedged sapphire) | |
Specification
(Tamb = 293 K, Tchip = 230 K, Vb = 1.0 V)
| Parameter | Value |
Unit | |||
| Min. | Typ. | Max. | - | ||
| Peak wavelength, λpeak | - | 4.5±0.3 | - | μm | |
| Specific wavelength, λspec | - | 5.0 | - | μm | |
| Cut-off wavelength, λcut-off (10%) | - | 5.5 | - | μm | |
| Detectivity, D* (λpeak, 20 kHz) | - | 2.0×1010 | - | cm⋅Hz1/2/W | |
| Detectivity, D* (λspec, 20 kHz) | 1.0×1010 | 1.2×1010 | - | cm⋅Hz1/2/W | |
| Current responsivity, Ri (λpeak) | - | 4.0 | - | A/W | |
| Current responsivity, Ri (λspec) | 0.5 | 3.0 | - | A/W | |
| Time constant, τ | - | 20 | - | μs | |
| Resistance, R | - | - | 750 | Ω | |
| Bias voltage, Vb | - | 1.0 | - | V | |
| 1/f corner frequency, fc | - | 20 | - | kHz | |
Spectral response
(Typ., Tamb = 293 K, Tchip = 230 K)
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Application notes
Temperature sensor characteristics
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