Four-band IR detection module based on four-element InAsSb thermoelectrically cooled optically immersed photovoltaic detector4EF-I-5
4EF-I-5 is a four-band IR detection module. A four-element thermoelectrically cooled optically immersed photovoltaic detector, based on InAsSb heterostructure is integrated with a four-channel, transimpedance, DC coupled amplifier and thermoelectric cooler controller.
4EF-I-5 is designed for gas detection applications. Each of the four active elements is paired with an optical filter, allowing for the selective detection of different gases based on their specific absorption spectra.

Features
Integrated TEC controller
Low crosstalk
Compatible with optical accessories
Possibility of selecting various configurations of bandpass filters
Applications
Gas detection, monitoring and analysis: CH4, C2H6, CO2,CO
Flame and explosion detection
Combustion process control
Emission control (exhaust fumes, greenhouse gases)
Detection module configuration
Detection module symbol | 4EF-I-5 |
Detector type | photovoltaic |
Active element material | epitaxial InAsSb heterostructure |
Optical area of single element, Ao | 1 mm × 1 mm |
Number of elements | 4 (2 rows, 2 columns) |
Active element pitch | 4.5 mm |
Optical immersion | hyperhemisphere |
Cooling | 3TE ((Tchip≅230K) |
Temperature sensor | thermistor |
Acceptance angle, Φ | ~29 deg. |
Window | four planar, with band-pass filters
Filter 1: λcwl=3330nm, bandwidth=150nm Filter 2: λcwl=4260nm, bandwidth=160nm Filter 3: λcwl=3897nm, bandwidth=74nm Filter 4: λcwl=4712nm, bandwidth=92nm |
Amplifier type | four-channel, transimpedance |
Signal output and power supply socket | WR-MM (female) SMT 690367281676
(mating plug: WR-MM (male) IDC 690157001672) |
Specification
(Typ., Tamb = 293 K, Tchip = 230 K, Rload = 1 MΩ, unless otherwise noted)
Parameter | Test conditions, remarks | Value | Unit | |||
Channel 1 | Channel 2 | Channel 3 | Channel 4 | - | ||
Active element temperature, Tchip | 230 | K | ||||
Filter centre wavelength, λcwl | 3330±30 | 4260±30 | 3897±40 | 4712±40 | nm | |
Detectivity, D* | At λ=λcwl, f=10kHz | 3.88×1010 | 4.14×1010 | 3.37×1010 | cm·Hz1/2/w | |
Output noise voltage density, vn | At f=10kHz | 390 | nV/Hz1/2 | |||
Low cut-off frequency, flo | DC coupling | 0 | Hz | |||
High cut-off frequency, fhi | 100 | kHz | ||||
Output impedance, Rout | 50 | Ω | ||||
Output voltage swing, Vout | max. ±1 | V | ||||
Output voltage offset, Voff | max. ±20 | mV | ||||
Power supply voltage (positive), +Vsup, +VTECC | +5 | V | ||||
Power supply voltage (negative), -Vsup | -5 | V | ||||
Power supply current consumption (positive), +Isup | max. +1.2 | A | ||||
Power supply current consumption (negative), -Isup | -200 | mA |
Spectral response
(Typ., Tamb = 293 K, Tchip = 230 K)

Mechanical layout (unit: mm)

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Application notes