home-icon/Products / Infrared detectors / InGaAs, InAs and InAsSb Detectors / InAsSb photovoltaic IR detector PVMA-1TE-5-1x1-TO39-pSiAR-70

InAsSb one-stage thermoelectrically-cooled photovoltaic multi-junction infrared detectorPVMA-1TE-5-1x1-TO39-pSiAR-70

PVMA-1TE-5-1x1-TO39-pSiAR-70 is a one-stage thermoelectrically cooled photovoltaic multi-junction IR detector based on InAsSb heterostructure for optimal performance and stability. It enables the detection of radiation in the range from 1.7 μm to 5.5 μm. Its active area (A) is 1 mm × 1 mm. The detector is available in the TO39 package with a planar silicon anti-reflection coating window (pSiAR).

Features

Spectral range: 2.0 to 5.5 µm

RoHS compliant III-V material

Large active area

Back-side illuminated

One-stage thermoelectrically cooled

Long term stability

No minimum order quantity required

Applications

Contactless temperature measurement: railway transport, industrial and laboratory processes monitoring

Flame and explosion detection

Threat warning systems

Heat-seeking, thermal signature detection

Dentistry

Gas detection, monitoring and analysis: CH4, C2H2, CH2O, HCl, NH3, SO2, C2H6, CO, CO2, NOx

Breath analysis: C2H6, CH2O, NH3, NO, OCS

Gas leak detection

Combustion process control

Non-destructive material testing

Detector configuration

Detector symbol PVMA-1TE-5-1x1-TO39-pSiAR-70
Detector type photovoltaic, multi-junction
Active element material epitaxial InAsSb heterostructure
Cooling 1TE (Tchip ≅ 253 K)
Temperature sensor thermistor
Active area, A 1 mm × 1 mm
Optical immersion no
Package 1TE-TO39 (8 pin)
Acceptance angle, Φ ~70 deg.
Window pSiAR (planar silicon, anti-reflection coating)

Specification

(Tamb = 293 K, Tchip = 253 K, Vb = 0 V)

Parameter Value Unit
Min. Typ. Max
Cut-on wavelength, λcut-on (10%) - 2.0 - μm
Peak wavelength, λpeak - 4.0±0.5 - μm
Cut-off wavelength, λcut-off (10%) - 5.5 - μm
Detectivity, D* (λpeak, f = 20 kHz) 3.0×109 1.0×1010 - cm·Hz1/2/W
Current responsivity, Ripeak) 0.08 0.18 - A/W
Time constant, τ - 20 80  ns
Dynamic resistance, Rd 1 4 -

Spectral response

(Typ., Tamb = 293 K, Tchip = 253 K)

form-close

Access to file

Access to this file is limited. In order to download it, please provide all the information and submit the form.

download-icon

Application notes password-padlock

Temperature sensor characteristics

I agree to the processing of personal data with the VIGO Privacy Policy

green-checkmark

Thank you!

This file has been sended to your e-mail.

For more information, please contact us


    SalesSupport

    Detectors ModulesEPI