home-icon/Products / Infrared detectors / HgCdTe (MCT) Photovoltaic / HgCdTe photovoltaic multi-junction IR detectors PVMI-4TE-10.6-1x1-TO8/TO66-wZnSeAR-36

HgCdTe four-stage thermoelectrically cooled optically immersed photovoltaic multi-junction infrared detectorsPVMI-4TE-10.6-1x1-TO8/TO66-wZnSeAR-36

PVMI-4TE-10.6-1x1-TO8-wZnSeAR-36 and PVMI-4TE-10.6-1x1-TO66-wZnSeAR-36 are four-stage thermoelectrically cooled (4TE) photovoltaic multi-junction IR detectors based on HgCdTe heterostructures for optimal performance and stability, optically immersed to enhance the parameters. Their specific wavelength (λspec) is 10.6 µm and their optical area (Ao) is 1 mm × 1 mm. The detectors are available in TO8 and TO66 packages with a 3 deg. wedged zinc selenide anti-reflection coated window (wZnSeAR) to prevent unwanted interference effects.

Features

Spectral range: 2.0 to 12.0 µm

Back-side illuminated

Fast response

Four-stage thermoelectrically cooled

Unique immersion lens technology applied

No bias required

No 1/f noise

No minimum order quantity required

Applications

Gas detection, monitoring and analysis: SO2, NH3, SF6

CBRN threats detection

CO2 laser measurements: power monitoring and control, beam profiling and positioning, calibration

Free-space optical communication

FTIR spectroscopy

Bacteria identification in medicine

Dentistry

Glucose sensing

Detector configuration

Detector symbol
PVMI-4TE-10.6-1x1-TO8-wZnSeAR-36
PVMI-4TE-10.6-1x1-TO66-wZnSeAR-36
Detector type
photovoltaic, multi-junction
Active element material epitaxial HgCdTe heterostructure
Cooling 4TE (Tchip ≅ 197 K)
Temperature sensor thermistor
Optical area, Ao 1 mm × 1 mm
Optical immersion hyperhemisphere
Package 4TE-TO8 4TE-TO66
Acceptance angle, Φ ~36 deg.
Window wZnSeAR (3 deg. wedged zinc selenide, anti-reflection coating)

Specification

(Tamb = 293 K, Tchip = 197 K, Vb = 0 V)

Parameter Value

Unit
Min. Typ. Max. -
Cut-on wavelength, λcut-on (10%) - 2.0 - μm
Peak wavelength, λpeak - 9.0±1.0 - μm
Specific wavelength, λspec - 10.6 - μm
Cut-off wavelength, λcut-off (10%) - 12.0 - μm
Detectivity, D* (λpeak, 20 kHz) - 3.0×109 - cm⋅Hz1/2/W
Detectivity, D* (λspec, 20 kHz) 2.5×109 - - cm⋅Hz1/2/W
Current responsivity, Ripeak) - 0.36 - A/W
Current responsivity, Rispec) 0.18 0.2 - A/W
Time constant, τ - 3 - ns
Dynamic resistance, Rd 120 250 - Ω

Spectral response

(Typ., Tamb = 293 K, Tchip = 197 K)

form-close

Access to file

Access to this file is limited. In order to download it, please provide all the information and submit the form.

download-icon

Application notes password-padlock

Temperature sensor characteristics

I agree to the processing of personal data with the VIGO Privacy Policy

green-checkmark

Thank you!

This file has been sended to your e-mail.

For more information, please contact us


    SalesSupport

    Detectors ModulesEPI