InAsSb superlattice room-temperature optically immersed photovoltaic infrared detectorPVIA-10-1x1-TO39-NW-36
PVIA-10-1x1-TO39-NW-36 is an uncooled photovoltaic IR detector based on InAsSb superlattice heterostructure for optimal performance and stability, optically immersed to enhance the parameters. It enables the detection of radiation in the range from 1.8 μm to 12.0 μm. Its optical area (Ao) is 1 mm × 1 mm. The detector is available in the TO39 package without a window.
Features
Spectral range: 1.8 to 12.0 µm
RoHS compliant III-V material
Unique optical immersion technology applied
High ambient operating and storage temperature
Back-side illuminated
Long term stability
Fast response
No minimum order quantity required
Applications
Gas detection, monitoring and analysis: SO2, NH3, SF6
CBRN threats detection
CO2 laser measurements (power monitoring and control, beam profiling and positioning, calibration)
Free-space optical communication
FTIR spectroscopy
Medical bacteria identification
Dentistry
Glucose sensing
Detector configuration
Detector symbol | PVIA-10-1x1-TO39-NW-36 |
Detector type | photovoltaic |
Active element material | epitaxial InAsSb superlattice heterostructure |
Cooling | no |
Temperature sensor | n/a |
Optical area, Ao | 1 mm × 1 mm |
Optical immersion | hyperhemisphere |
Package | TO39 (3 pins) |
Acceptance angle, Φ | ~36 deg. |
Window | no |
Specification
(Tamb = Tchip = 293 K, Vb = 0 V)
Parameter | Value | Unit | ||
Min. | Typ. | Max | ||
Cut-on wavelength, λcut-on (10%) | - | 1.8 | - | μm |
Peak wavelength, λpeak | - | 7.1 | - | μm |
Cut-off wavelength, λcut-off (10%) | - | 12.0 | - | μm |
Detectivity, D* (λpeak, f = 20 kHz) | 5.0×108 | 7.7×108 | - | cm·Hz1/2/W |
Current responsivity, Ri (λpeak) | 0.09 | 0.14 | - | A/W |
Time constant, τ | - | 1.65 | 5 | ns |
Dynamic resistance, Rd | 30 | 51 | - | Ω |
Spectral response
(Typ., Tamb = Tchip = 293 K)
Recommended amplifier
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Application notes