Micro-size IR detection module based on HgCdTe room temperature photovoltaic multi-junction detectormicroM-10.6
microM-10.6 is a detection module featuring an uncooled photovoltaic multi-junction IR detector based on an HgCdTe heterostructure (PVM-10.6-1x1-TO39-NW-90), integrated with a micro-size, transimpedance amplifier.
For proper operation, it is recommended to use the PPS-03-09 VIGO power supply.
The microM-10.6 detection module is easy to assemble in space-limited systems.
This is a Selected Product. It belongs to our family of MWIR and LWIR detectors and detection modules selected as the most suitable options for the majority of Mid Infrared applications. These products are available in a short lead time for small-batch orders and deliver reliable infrared solutions with stable parameters.
Features
Spectral range: 2.0 to 12.0 µm
Frequency bandwidth: DC to 10 MHz
Very small size
Convenient to use
Versatile
Cost effective OEM version available
Quantity discounted price
Fast delivery
Applications
Gas detection, monitoring and analysis: SO2, NH3, SF6
CBRN threats detection
CO2 laser measurements: power monitoring and control, beam profiling and positioning, calibration
Free-space optical communication
FTIR spectroscopy
Medical bacteria identification
Dentistry
Glucose sensing
Detection module configuration
| Detection module symbol | microM-10.6 |
| Detector symbol | PVM-10.6-1x1-TO39-NW-90 |
| Detector type | photovoltaic, multi-junction |
| Active element material | epitaxial HgCdTe heterostructure |
| Active area, A | 1 mm × 1 mm |
| Optical immersion | no |
| Cooling | no |
| Temperature sensor | n/a |
| Acceptance angle, Φ | ~85 deg. |
| Window | no |
| Amplifier type | micro-size, transimpedance |
| Signal output plug | SMA |
| Power supply plug | 03T-JWPF-VSLE-S (male) |
Specification
(Tamb = Tchip = 293 K, Rload = 50 Ω, unless otherwise noted)
| Parameter | Test conditions, remarks | Value | Unit | ||
| Min. | Typ. | Max. | - | ||
| Active element temperature, Tchip | Tchip = Tamb | - | 293 | - | K |
| Cut-on wavelength, λcut-on (10%) | At 10% of the peak responsivity | - | 2.0 | - | µm |
| Peak wavelength, λpeak | - | 8.5±1.0 | - | µm | |
| Specific wavelength, λspec | - | 10.6 | - | µm | |
| Cut-off wavelength, λcut-off (10%) | At 10% of the peak responsivity | - | 12.0 | - | µm |
| Detectivity, D* | At λ=λpeak, f=100kHz
At λ=λspec, f=100kHz |
-
4.0×106 |
3.4×107
1.4×107 |
-
- |
cm×Hz1/2/W |
| Output noise voltage density, vn | At f=100kHz | - | - | 1 | μV/Hz1/2 |
| Voltage responsivity, Rv | At λ=λpeak
At λ=λspec |
-
3.0×101 |
2.1×102
8.5×101 |
-
- |
V/W |
| Low cut-off frequency, flo | DC coupling | - | 0 | - | Hz |
| High cut-off frequency, fhi | 10 | - | - | MHz | |
| Output impedance, Rout | - | 50 | - | Ω | |
| Output voltage swing, Vout | - | - | ±1 | V | |
| Output voltage offset, Voff | - | - | ±20 | mV | |
| Power supply voltage (positive), +Vsup | - | +9 | - | V | |
| Power supply voltage (negative), -Vsup | - | -9 | - | V | |
| Power supply current consumption (positive), +Isup | - | - | +50 | mA | |
| Power supply current consumption (negative), -Isup | - | - | -30 | mA | |
| Weight | - | 40 | - | g | |
Spectral response
(Typ., Tamb = Tchip = 293 K)
Mechanical layout (unit: mm)
Access to file
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Application notes
Temperature sensor characteristics
Dedicated accessories
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