home-icon/Products / Infrared Detections Modules / Selected Line / HgCdTe micro-size LWIR detection module microM-10.6

Micro-size IR detection module based on HgCdTe room temperature photovoltaic multi-junction detectormicroM-10.6

microM-10.6 is a detection module featuring an uncooled photovoltaic multi-junction IR detector based on a HgCdTe heterostructure (PVMI-10.6-1x1-TO39-NW-90), integrated with a micro-size, transimpedance amplifier.
For proper operation, it is recommended to use the PPS-03-09 VIGO power supply.
The microM-10.6 detection module is easy to assemble in space-limited systems.

Features

Spectral range: 2.0 to 12.0 µm

Frequency bandwidth: DC to 10 MHz

Very small size

Convenient to use

Versatile

Cost effective OEM version available

Quantity discounted price

Fast delivery

Applications

Gas detection, monitoring and analysis: SO2, NH3, SF6

CBRN threats detection

CO2 laser measurements: power monitoring and control, beam profiling and positioning, calibration

Free-space optical communication

FTIR spectroscopy

Medical bacteria identification

Dentistry

Glucose sensing

Detection module configuration

Detection module symbol microM-10.6
Detector symbol PVM-10.6-1x1-TO39-NW-90
Detector type photovoltaic, multi-junction
Active element material epitaxial HgCdTe heterostructure
Active area, A 1 mm × 1 mm
Optical immersion no
Cooling no
Temperature sensor n/a
Acceptance angle, Φ ~85 deg.
Window no
Preamplifier type micro-size, transimpedance
Signal output plug SMA
Power supply plug 03T-JWPF-VSLE-S (male)

Specification

(Tamb = Tchip = 293 K, Rload = 50 Ω, unless otherwise noted)

Parameter Test conditions, remarks Value Unit
Min. Typ. Max. -
Active element temperature, Tchip Tchip = Tamb - 293 - K
Cut-on wavelength, λcut-on (10%) At 10% of the peak responsivity - 2.0 - µm
Peak wavelength, λpeak - 8.5±1.0 - µm
Specific wavelength, λspec - 10.6 - µm
Cut-off wavelength, λcut-off (10%) At 10% of the peak responsivity - 12.0 - µm
Detectivity, D* At λ=λpeak, f=100kHz

At λ=λspec, f=100kHz

-

4.0×106

3.4×107

1.4×107

-

-

cm×Hz1/2/W
Output noise voltage density, vn At f=100kHz - - 1 μV/Hz1/2
Voltage responsivity, Rv At λ=λpeak

At λ=λspec

-

3.0×101

2.1×102

8.5×101

-

-

V/W
Low cut-off frequency, flo DC coupling - 0 - Hz
High cut-off frequency, fhi 10 - - MHz
Output impedance, Rout - 50 -
Output voltage swing, Vout - - ±1 V
Output voltage offset, Voff - - ±20 mV
Power supply voltage (positive), +Vsup - +9 - V
Power supply voltage (negative), -Vsup - -9 - V
Power supply current consumption (positive), +Isup - - +50 mA
Power supply current consumption (negative), -Isup - - -30 mA
Weight - 40 - g

Spectral response

(Typ., Tamb = Tchip = 293 K)

Mechanical layout (unit: mm)

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Temperature sensor characteristics

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