HgCdTe four-stage thermoelectrically cooled optically immersed photovoltaic infrared detectorsPVI-4TE-3-1x1-TO8/TO66-wAl2O3-36

PVI-4TE-3-1x1-TO8-wAl₂O₃-36 and PVI-4TE-3-1x1-TO66-wAl₂O₃-36 are four-stage thermoelectrically cooled (4TE) photovoltaic IR detectors based on HgCdTe heterostructures for optimal performance and stability, optically immersed to enhance the parameters. Their specific wavelength (λ_spec) is 3.0 µm and their optical area (A_o) is 1 mm × 1 mm. The cut‑on wavelength (λ_cut-on) can be optimized upon request. Applying a reverse bias (V_b) may significantly increase response speed and dynamic range. While this improves performance at high frequencies, be aware that the 1/f noise appearing in biased detectors may reduce performance at low frequencies. The detectors are available in TO8 and TO66 packages with a 3 deg. wedged sapphire window (wAl₂O₃) to prevent unwanted interference effects.