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InAs room temperature, photovoltaic infrared detectorPVA-3-1×1-TO39-NW-90
PVA-3-1×1-TO39-NW-90 is a room-temperature IR photovoltaic detector based on InAs heterostructure. It enables the detection of radiation in the range from 2.3 μm to 3.5 μm. The detector is mounted in the TO39 package without a window. It is mercury and cadmium-free and is fully compliant with the RoHS Directive.
Features
Spectral range: 2.3 to 3.5 µm
III-V material
No minimum order quantity required
Applications
Gas detection (CO, HF, NH3, C2H2, CH4, C2H6, HCl)
Detector configuration
| Detector type | photovoltaic |
| Active element material | epitaxial InAs heterostructure |
| Active area, A | 1 mm × 1 mm |
| Immersion | no |
| Cooling | no |
| Package | TO39 |
| Acceptance angle, Φ | ~90 deg. |
| Window | no |
Specification
(Tchip = 293 K, Vb = 0 V, unless otherwise noted)
| Parameter | Typical value |
| Active element temperature, Tchip = Tamb | 293 K |
| Cut-on wavelength, λcut-on (10%) | 2.3 μm |
| Peak wavelength, λpeak | 3.1 μm |
| Cut-off wavelength, λcut-off (10%) | 3.5 μm |
| Detectivity, D* (λpeak, f = 20 kHz) | 7.0×109 cm·Hz1/2/W |
| Current responsivity, Ri (λpeak) | 0.9 A/W |
| Time constant, τ | 35 ns |
| Resistance, R | 90 Ω |
Spectral response
(Typ., Tchip = 293 K)
Mechanical layout and pinout
(Unit: mm)
Access to file
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Application notes
Temperature sensor characteristics
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