InAs room temperature photovoltaic infrared detectorPVA-3-1x1-TO39-NW-90
PVA-3-1x1-TO39-NW-90 is an uncooled photovoltaic IR detector based on InAs heterostructure for optimal performance and stability. It enables the detection of radiation in the range from 2.3 μm to 3.5 μm. Its active area (A) is 1 mm × 1 mm. The detector is available in the TO39 package without a window.
Features
Spectral range: 2.3 to 3.5 µm
RoHS-compliant III-V material
Large active area
High ambient operating and storage temperature
Back-side illuminated
No minimum order quantity required
Applications
Gas detection, monitoring and analysis: H2O, HF, CH4, C2H2, C2H4, C2H6, NH3
Combustion process control
Green energy
Medical laser control
Detector configuration
Detector symbol | PVA-3-1x1-TO39-NW-90 |
Detector type | photovoltaic |
Active element material | epitaxial InAs heterostructure |
Cooling | no |
Temperature sensor | n/a |
Active area, A | 1 mm × 1 mm |
Optical immersion | no |
Package | TO39 (3 pin) |
Acceptance angle, Φ | ~90 deg. |
Window | no |
Specification
(Tamb = Tchip = 293 K, Vb = 0 V)
Parameter | Value | Unit | ||
Min. | Typ. | Max | ||
Cut-on wavelength, λcut-on (10%) | - | 2.3 | - | μm |
Peak wavelength, λpeak | - | 3.1 | - | μm |
Cut-off wavelength, λcut-off (10%) | - | 3.5 | - | μm |
Detectivity, D* (λpeak, f = 20 kHz) | 5.0×109 | 7.0×1010 | - | cm·Hz1/2/W |
Current responsivity, Ri (λpeak) | 0.7 | 0.9 | - | A/W |
Time constant, τ | - | 35 | 40 | ns |
Dynamic resistance, Rd | 55 | 75 | - | Ω |
Spectral response
(Typ., Tamb = Tchip = 293 K)
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Application notes