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InAs room temperature, photovoltaic infrared detectorPVA-3-1×1-TO39-NW-90

PVA-3-1×1-TO39-NW-90 is a room-temperature IR photovoltaic detector based on InAs heterostructure. It enables the detection of radiation in the range from 2.3 μm to 3.5 μm. The detector is mounted in the TO39 package without a window. It is mercury and cadmium-free and is fully compliant with the RoHS Directive.


Spectral range: 2.3 to 3.5 µm

III-V material

No minimum order quantity required


Gas detection (CO, HF, NH3, C2H2, CH4, C2H6, HCl)

Detector configuration

Detector type photovoltaic
Active element material epitaxial InAs heterostructure
Active area, A 1 mm × 1 mm
Immersion no
Cooling no
Package TO39
Acceptance angle, Φ ~90 deg.
Window no


(Tchip = 293 K, Vb = 0 V, unless otherwise noted)

Parameter Typical value
Active element temperature, Tchip = Tamb 293 K
Cut-on wavelength, λcut-on (10%) 2.3 μm
Peak wavelength, λpeak 3.1 μm
Cut-off wavelength, λcut-off (10%) 3.5 μm
Detectivity, D* (λpeak, f = 20 kHz) 7.0×109 cm·Hz1/2/W
Current responsivity, Ripeak) 0.9 A/W
Time constant, τ 35 ns
Resistance, R 90 Ω

Spectral response

(Typ., Tchip = 293 K)

Mechanical layout and pinout

(Unit: mm)


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Temperature sensor characteristics

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