InAs room temperature, photovoltaic infrared detectorPVA-3-1×1-TO39-NW-90
PVA-3-1×1-TO39-NW-90 is a room-temperature IR photovoltaic detector based on InAs heterostructure. It enables the detection of radiation in the range from 2.3 μm to 3.5 μm. The detector is mounted in the TO39 package without a window. It is mercury and cadmium-free and is fully compliant with the RoHS Directive.
Spectral range: 2.3 to 3.5 µm
No minimum order quantity required
Gas detection (CO, HF, NH3, C2H2, CH4, C2H6, HCl)
|Active element material||epitaxial InAs heterostructure|
|Active area, A||1 mm × 1 mm|
|Acceptance angle, Φ||~90 deg.|
(Tchip = 293 K, Vb = 0 V, unless otherwise noted)
|Active element temperature, Tchip = Tamb||293 K|
|Cut-on wavelength, λcut-on (10%)||2.3 μm|
|Peak wavelength, λpeak||3.1 μm|
|Cut-off wavelength, λcut-off (10%)||3.5 μm|
|Detectivity, D* (λpeak, f = 20 kHz)||7.0×109 cm·Hz1/2/W|
|Current responsivity, Ri (λpeak)||0.9 A/W|
|Time constant, τ||35 ns|
|Resistance, R||90 Ω|
(Typ., Tchip = 293 K)
Mechanical layout and pinout
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Temperature sensor characteristics
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