InAs room temperature photovoltaic infrared detectorPVA-3-d1.2-SMD-NW/pAl2O3-115

PVA-3-d1.2-SMD-NW-115 and PVA-3-d1.2-SMD-pAl₂O₃-115 are uncooled photovoltaic IR detector based on InAs heterostructure for optimal performance and stability. It enables the detection of radiation in the range from 1.3 μm to 3.6 μm. The diameter (d_A) of its active element is 1.2 mm. The detector is available in the SMD package without a window or with a planar sapphire window (pAl₂O₃).

See specification

Close-up of a small, square electronic component with a central round lens, encased in a purple and gold housing. The component is positioned against a plain white background.

Download datasheet

See related files

Features

Spectral range: 1.3 to 3.6 µm

RoHS-compliant III-V material

Large active area

Front-side illuminated

High ambient operating and storage temperature

Compact, surface mount type ceramic package

Compatible with lead-free solder reflow

No minimum order quantity required

Applications

Gas detection, monitoring and analysis: H2O, HF, CH4, C2H2, C2H4, C2H6, NH3

Combustion process control

Green energy

Medical laser control

Detector configuration

Detector symbol	PVA-3-d1.2-SMD-NW-115	PVA-3-d1.2-SMD-pAl₂O₃-115
Detector type	photovoltaic
Active element material	epitaxial InAs heterostructure
Cooling	no
Temperature sensor	n/a
Active area diameter, d_A	1.2 mm
Immersion	no
Package	SMD
Acceptance angle, Φ	≥115 deg.
Window	no	pAl₂O₃ (planar sapphire)

Specification

(T_amb = T_chip = 293 K, V_b = 0 V)

Parameter	Value			Unit
	Min.	Typ.	Max.	-
Cut-on wavelength, λ_cut-on (10%)	-	1.3	-	μm
Peak wavelength, λ_peak	-	2.9	-	μm
Cut-off wavelength, λ_cut-off (10%)	-	3.6 μm	-	μm
Detectivity, D* (λ_peak, f = 20 kHz)	4.2×10⁹	6.4×10⁹	-	cm·Hz^1/2/W
Current responsivity, R_i (λ_peak)	0.68	0.88	-	A/W
Time constant, τ	-	35	45	ns
Dynamic resistance, R_d	50	70	-	Ω