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InAs room temperature photovoltaic infrared detectorPVA-3-d1.2-SMD-pAl2O3-115
PVA-3-d1.2-SMD-pAl2O3-115 is an uncooled photovoltaic IR detector based on InAs heterostructure for optimal performance and stability. It enables the detection of radiation in the range from 1.3 μm to 3.6 μm. The diameter (dA) of its active element is 1.2 mm. The detector is available in the SMD package with a planar sapphire window (pAl2O3).
Features
Spectral range: 1.3 to 3.6 µm
Front-side illuminated
RoHS-compliant III-V material
High ambient operating and storage temperature
Compact, surface mount type ceramic package
Compatible with lead-free solder reflow
No minimum order quantity required
Applications
Gas detection, monitoring and analysis: H2O, HF, CH4, C2H2, C2H4, C2H6, NH3
Combustion process control
Green energy
Medical laser control
Detector configuration
| Detector symbol | PVA-3-d1.2-SMD-pAl2O3-115 |
| Detector type | photovoltaic |
| Active element material | epitaxial InAs heterostructure |
| Cooling | no |
| Temperature sensor | n/n |
| Active area diameter, dA | 1.2 mm |
| Immersion | no |
| Package | SMD |
| Acceptance angle, Φ | ≥115 deg. |
| Window | pAl2O3 (planar sapphire) |
Specification
(Tamb = Tchip = 293 K, Vb = 0 V)
| Parameter | Value | Unit | ||
| Min. | Typ. | Max. | - | |
| Cut-on wavelength, λcut-on (10%) | - | 1.3 | - | μm |
| Peak wavelength, λpeak | - | 2.9 | - | μm |
| Cut-off wavelength, λcut-off (10%) | - | 3.6 μm | - | μm |
| Detectivity, D* (λpeak, f = 20 kHz) | 3.0×109 | 5.0×109 | - | cm·Hz1/2/W |
| Current responsivity, Ri (λpeak) | 0.45 | 0.55 | - | A/W |
| Time constant, τ | - | 35 | 45 | ns |
| Dynamic resistance, Rd | 55 | 75 | - | Ω |
Spectral response
(Typ., Tamb = Tchip = 293 K)
Access to file
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Application notes
Temperature sensor characteristics
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