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HgCdTe two-stage thermoelectrically cooled photovoltaic multi-junction infrared detectorsPVM-2TE-10.6-3x3-TO8/TO66-wZnSeAR-70
PVM-2TE-10.6-3x3-TO8-wZnSeAR-70 and PVM-2TE-10.6-3x3-TO66-wZnSeAR-70 are two-stage thermoelectrically cooled (2TE) photovoltaic multi-junction IR detectors based on HgCdTe heterostructures for optimal performance and stability. Their specific wavelength (λspec) is 10.6 µm and their active area (A) is 3 mm × 3 mm. The detectors are available in TO8 and TO66 packages with a 3 deg. wedged zinc selenide anti-reflection coated window (wZnSeAR) to prevent unwanted interference effects.
Features
Spectral range: 2.0 to 13.0 µm
Large active area
Back-side illuminated
Fast response
Two-stage thermoelectrically cooled
No bias required
No1/f noise
No minimum order quantity required
Applications
Gas detection, monitoring and analysis: SO2, NH3, SF6
CBRN threats detection
CO2 laser measurements: power monitoring and control, beam profiling and positioning, calibration
Free-space optical communication
FTIR spectroscopy
Bacteria identification in medicine
Dentistry
Glucose sensing
Detector configuration
|
Detector symbol
|
PVM-2TE-10.6-3x3-TO8-wZnSeAR-70 |
PVM-2TE-10.6-3x3-TO66-wZnSeAR-70 |
|
Detector type
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photovoltaic, multi-junction |
|
| Active element material | epitaxial HgCdTe heterostructure | |
| Cooling | 2TE (Tchip ≅ 230 K) | |
| Temperature sensor | thermistor | |
| Active area, A | 3 mm × 3 mm | |
| Optical immersion | no | |
| Package | 2TE-TO8 | 2TE-TO66 |
| Acceptance angle, Φ | ~70 deg. | |
| Window | wZnSeAR (3 deg. wedged zinc selenide, anti-reflection coating) | |
Specification
(Tamb = 293 K, Tchip = 230 K, Vb = 0 V)
| Parameter | Value |
Unit | |||
| Min. | Typ. | Max. | - | ||
| Cut-on wavelength, λcut-on (10%) | - | 2.0 | - | μm | |
| Peak wavelength, λpeak | - | 9.0±1.0 | - | μm | |
| Specific wavelength, λspec | - | 10.6 | - | μm | |
| Cut-off wavelength, λcut-off (10%) | - | 13.0 | - | μm | |
| Detectivity, D* (λpeak, 20 kHz) | - | 1.5×108 | - | cm⋅Hz1/2/W | |
| Detectivity, D* (λspec, 20 kHz) | 1.0×108 | - | - | cm⋅Hz1/2/W | |
| Current responsivity, Ri (λpeak) | - | 0.0045 | - | A/W | |
| Current responsivity, Ri (λspec) | 0.03 | 0.04 | - | A/W | |
| Time constant, τ | - | 4 | - | ns | |
| Dynamic resistance, Rd | 90 | 120 | - | Ω | |
Spectral response
(Typ., Tamb = 293 K, Tchip = 230 K)
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Application notes
Temperature sensor characteristics
Related products
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