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HgCdTe room temperature optically immersed photovoltaic infrared detectorPVI-5-1x1-TO39-NW-36
PVI-5-1x1-TO39-NW-36 is an uncooled photovoltaic IR detector based on HgCdTe heterostructure for optimal performance and stability, optically immersed to enhance the parameters. Its specific wavelength (λspec) is 5.0 µm and its optical area (Ao) is 1 mm × 1 mm. The cut‑on wavelength (λcut-on) can be optimized upon request. Applying a reverse bias (Vb) may significantly increase response speed and dynamic range. While this improves performance at high frequencies, be aware that the 1/f noise appearing in biased detectors may reduce performance at low frequencies. The detector is available in the TO39 package without a window.
Features
Spectral range: 2.3 to 4.4 µm
Back-side illuminated
Room temperature operation
Unique immersion lens technology applied
No bias required
No 1/f noise
No minimum order quantity required
Applications
Contactless temperature measurement: railway transport, industrial and laboratory processes monitoring
Flame and explosion detection
Threat warning systems
Heat-seeking, thermal signature detection
Dentistry
Gas detection, monitoring and analysis: CH4, C2H2, CH2O, HCl, NH3, SO2, C2H6, CO, CO2, NOx
Breath analysis: C2H6, CH2O, NH3, NO, OCS
Gas leak detection
Combustion process control
Non-destructive material testing
Detector configuration
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Detector symbol
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PVI-5-1x1-TO39-NW-36 |
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Detector type
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photovoltaic |
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| Active element material | epitaxial HgCdTe heterostructure | |
| Cooling | no | |
| Temperature sensor | n/a | |
| Optical area, Ao | 1 mm × 1 mm | |
| Optical immersion | hyperhemisphere | |
| Package | TO39 (3 pin) | |
| Acceptance angle, Φ | ~36 deg. | |
| Window | no | |
Specification
(Tamb = Tchip = 293 K, Vb = 0 V)
| Parameter | Value |
Unit | |||
| Min. | Typ. | Max. | - | ||
| Cut-on wavelength, λcut-on (10%) | - | 2.0 | - | μm | |
| Peak wavelength, λpeak | - | 4.4±0.2 | - | μm | |
| Specific wavelength, λspec | - | 5.0 | - | μm | |
| Cut-off wavelength, λcut-off (10%) | - | 5.4 | - | μm | |
| Detectivity, D* (λpeak, 20 kHz) | - | 2.5×1010 | - | cm⋅Hz1/2/W | |
| Detectivity, D* (λspec, 20 kHz) | 1.0×1010 | 1.5×1010 | - | cm⋅Hz1/2/W | |
| Current responsivity, Ri (λpeak) | - | 2.0 | - | A/W | |
| Current responsivity, Ri (λspec) | 1.0 | 1.2 | - | A/W | |
| Time constant, τ | - | 120 | - | ns | |
| Dynamic resistance, Rd | 100 | 250 | - | Ω | |
Spectral response
(Typ., Tamb = Tchip = 293 K)
Access to file
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Application notes
Temperature sensor characteristics
Dedicated amplifier
For more information, please contact us
