HgCdTe (MCT) Detection Module

SM-I-12

2.0 – 14.0 µm, 10 Hz – 1 MHz, with optically immersed photoconductive detector

SM-I-12 is an ultra-small IR detection module. Thermoelectrically cooled, optically immersed photoconductive detector, based on HgCdTe heterostructure (PCI-3TE-12-1×1-TO8-wZnSeAR-36) is integrated with transimpedance, AC coupled preamplifier. There is a possibility to manually adjust gain of the signal. 3° wedged zinc selenide anti-reflection coated window prevents unwanted interference effects. SM-I-12 is easy to assembly in space limited measuring systems of FTIR applications.

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Features

Anti-fringing technology applied

Significant fringing reduction for 2.2 – 8.2 µm spectral range

Large active area

Excellent linearity

Applications

FTIR spectroscopy and spectrometry

Specification (T_a = 20°C)

Parameter	Typical value
Optical parameters
Cut-on wavelength λ_cut-on (10%) µm	≤2.0
Peak wavelength λ_peak, µm	10.0±0.2
Optimum wavelength λ_opt, µm	12.0
Cut-off wavelength λ_cut-off (10%) µm	14.0±0.2
*Detectivity D(λ_peak, 20 kHz), cm⋅Hz^1/2/W**	≥2.5×10⁹
*Detectivity D(λ_opt, 20 kHz), cm⋅Hz^1/2/W**	≥1.3×10⁹
Output noise density v_n(20 kHz), μV/Hz^1/2	≤6
Electrical parameters
Voltage responsivity R_v(λ_peak, 100 kV/A), V/W	≥1.35×10⁵
Voltage responsivity R_v(λ_opt, 100 kV/A), V/W	≥6.30×10⁴
Voltage responsivity R_v(λ_peak, 55 kV/A), V/W	≥7.45×10⁴
Voltage responsivity R_v(λ_opt, 55 kV/A), V/W	≥3.45×10⁴
Low cut-off frequency f_lo, Hz	10
High cut-off frequency f_hi, Hz	1M±0.1
Output impedance R_out, Ω	50
Output voltage swing V_out, V	±10 (R_L = 1 MΩ^*))
Output voltage offset V_off, V	max ±20
Other information
Active element material	epitaxial HgCdTe heterostructure
Optical area A_O, mm×mm	1×1
Window	wZnSeAR
Acceptance angle, Φ	~36°
Ambient operating temperature T_a, °C	10 to 30
Signal output socket	MMCX
Power supply and TEC control socket	AMPMODU 2×4 (male)
Mounting hole	none
Fan	no (external heatsink necessary)
^*) R_L – load resistance