HgCdTe (MCT) Detection Module

SM-I-12

2.0 – 14.0 µm, 10 Hz – 1 MHz, with optically immersed photoconductive detector

SM-I-12 is an ultra-small IR detection module. Thermoelectrically cooled, optically immersed photoconductive detector, based on HgCdTe heterostructure (PCI-3TE-12-1×1-TO8-wZnSeAR-36) is integrated with transimpedance, AC coupled preamplifier. There is a possibility to manually adjust gain of the signal. 3° wedged zinc selenide anti-reflection coated window prevents unwanted interference effects. SM-I-12 is easy to assembly in space limited measuring systems of FTIR applications.

See specification

Features

Anti-fringing technology applied

Significant fringing reduction for 2.2 – 8.2 µm spectral range

Large active area

Excellent linearity

Applications

FTIR spectroscopy and spectrometry

Specification (Ta = 20°C)

Parameter
Typical value
Optical parameters
Cut-on wavelength λcut-on (10%) µm
≤2.0
Peak wavelength λpeak, µm
10.0±0.2
Optimum wavelength λopt, µm
12.0
Cut-off wavelength λcut-off (10%) µm
14.0±0.2
Detectivity D*(λpeak, 20 kHz), cm⋅Hz1/2/W
≥2.5×109
Detectivity D*(λopt, 20 kHz), cm⋅Hz1/2/W
≥1.3×109
Output noise density vn(20 kHz), μV/Hz1/2
≤6
Electrical parameters
Voltage responsivity Rvpeak, 100 kV/A), V/W
≥1.35×105
Voltage responsivity Rvopt, 100 kV/A), V/W
≥6.30×104
Voltage responsivity Rvpeak, 55 kV/A), V/W
≥7.45×104
Voltage responsivity Rvopt, 55 kV/A), V/W
≥3.45×104
Low cut-off frequency flo, Hz
10
High cut-off frequency fhi, Hz 1M±0.1
Output impedance Rout, Ω 50
Output voltage swing Vout, V ±10  (RL = 1 MΩ*))
Output voltage offset Voff, V
max ±20
Other information
Active element material
epitaxial HgCdTe heterostructure
Optical area AO, mm×mm
1×1
Window
wZnSeAR
Acceptance angle, Φ
~36°
Ambient operating temperature Ta, °C
10 to 30
Signal output socket
MMCX
Power supply and TEC control socket
AMPMODU 2×4 (male)
Mounting hole
none
Fan
no

(external heatsink necessary)

*) RL – load resistance

Spectral response (Ta = 20°C)

SM-I-12

Mechanical layout

SM-I-12-1

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