home-icon/Products / Infrared detectors / HgCdTe (MCT) Photoconductive / HgCdTe (MCT) three-stage TE cooled photoconductive infrared detector PCI-3TE-12-1×1-TO8-wZnSeAR-36

HgCdTe (MCT) three-stage TE cooled photoconductive infrared detectorPCI-3TE-12-1×1-TO8-wZnSeAR-36

PCI-3TE-12-1×1-TO8-wZnSeAR-36 is a three-stage thermoelectrically cooled IR photoconductor, based on sophisticated HgCdTe heterostructure for the best performance and stability. The device is optimized for the maximum performance at λopt = 12 µm. Detector element is monolithically integrated with hyperhemispherical GaAs microlens in order to improve performance of the device. Photoconductive detector should operate in optimum bias voltage and current readout mode. Performance at low frequencies is reduced due to 1/f noise. 3° wedged zinc selenide anti-reflection coated (wZnSeAR) window prevents unwanted interference effects.


Spectral range: 2.0 to 13.8 µm

Hyperhemiimmersion microlens technology applied

Long-term stability and reliability

Quantity discounted price

Fast delivery

No minimum order quantity required


FTIR spectroscopy

Detector configuration

Detector type photoconductive
Active element material epitaxial HgCdTe heterostructure
Optical area, AO 1 mm × 1 mm
Immersion hyperhemisphere
Cooling 3TE
Temperature sensor thermistor
Detector package TO8
Acceptance angle, Φ ~36 deg.
Window wZnSeAR

(3 deg. wedged zinc selenide, anti-refelction coating)


(Tamb = 293 K, Tchip = 210 K, Vb = 1.8 V, unless otherwise noted)

Parameter Value

  Min. Typ. Max.
Active element temperature 210 K
Cut-on wavelength, λcut-on (10%) 20 μm
Peak wavelength, λpeak 9.2 10.0 10.2 μm
Optimum wavelength, λopt 12.0 μm
Cut-off wavelength, λcut-off (10%) 13.8 μm
Detectivity, D* (λpeak, 20 kHz)  1.6×109 cm⋅Hz1/2/W
Detectivity, D* (λopt, 20 kHz) 9.0×108 cm⋅Hz1/2/W
Current responsivity, Ripeak) 0.11 A/W
Current responsivity, Riopt) 0.07 A/W
Time constant, τ 5 ns
Resistance, R 300 Ω
Bias voltage Vb 1.8 V
1/f noise corner frequency fc, Hz 20 kHz

Spectral response

(Typ., Tamb = 293 K, Tchip = 210 K)

Mechanical layout

(Unit: mm)


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Temperature sensor characteristics

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