HgCdTe four-stage thermoelectrically cooled photovoltaic multi-junction infrared detectorsPVMI-4TE-8-1x1-TO8/TO66-wZnSeAR-36

PVMI-4TE-8-1x1-TO8-wZnSeAR-36 and PVMI-4TE-8-1x1-TO66-wZnSeAR-36 are four-stage thermoelectrically cooled (4TE) photovoltaic multi-junction IR detectors based on HgCdTe heterostructures for optimal performance and stability, optically immersed to enhance the parameters. Their specific wavelength (λ_spec) is 8.0 µm and their optical area (A_o) is 1 mm × 1 mm. The detectors are available in TO8 and TO66 packages with a 3 deg. wedged zinc selenide anti-reflection coated window (wZnSeAR) to prevent unwanted interference effects.

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Features

Spectral range: 3.0 to 10.0 µm

Back-side illuminated

Four-stage thermoelectrically cooled

Unique immersion lens technology applied

No bias required

No 1/f noise

No minimum order quantity required

Applications

Gas detection, monitoring and analysis: CH4, H2S, NO2, SOx

FTIR spectroscopy

Detector configuration

Detector symbol	PVMI-4TE-8-1x1-TO8-wZnSeAR-36	PVMI-4TE-8-1x1-TO66-wZnSeAR-36
Detector type	photovoltaic, multi-junction
Active element material	epitaxial HgCdTe heterostructure
Cooling	4TE (T_chip ≅ 197 K)
Temperature sensor	thermistor
Optical area, A_o	1 mm × 1 mm
Optical immersion	hyperhemisphere
Package	4TE-TO8	4TE-TO66
Acceptance angle, Φ	~36 deg.
Window	wZnSeAR (3 deg. wedged zinc selenide, anti-reflection coating)

Specification

(T_amb = 293 K, T_chip = 197 K, V_b = 0 V)

Parameter	Value			Unit
	Min.	Typ.	Max.	-
Cut-on wavelength, λ_cut-on (10%)	-	2.0	-	μm
Peak wavelength, λ_peak	-	7.0±1.0	-	μm
Specific wavelength, λ_spec	-	8.0	-	μm
Cut-off wavelength, λ_cut-off (10%)	-	9.8	-	μm
*Detectivity, D (λ_peak, 20 kHz)**	-	8.0×10⁹	-	cm⋅Hz^1/2/W
*Detectivity, D (λ_spec, 20 kHz)**	6.0×10⁹	-	-	cm⋅Hz^1/2/W
Current responsivity, R_i (λ_peak)	-	0.4	-	A/W
Current responsivity, R_i (λ_spec)	0.2	0.25	-	A/W
Time constant, τ	-	4	-	ns
Dynamic resistance, R_d	500	800	-	Ω