home-icon/Products / Infrared detectors / HgCdTe (MCT) Photovoltaic / HgCdTe photovoltaic IR detectors PV-2TE-4-0.1x0.1-TO8/TO66-wAl2O3-70

HgCdTe two-stage thermoelectrically cooled photovoltaic infrared detectorsPV-2TE-4-0.1x0.1-TO8/TO66-wAl2O3-70

PV-2TE-4-0.1×0.1-TO8-wAl2O3-70 and PV-2TE-4-0.1×0.1-TO66-wAl2O3-70 are two-stage thermoelectrically cooled (2TE) photovoltaic IR detectors based on HgCdTe heterostructures for optimal performance and stability. Their specific wavelength (λspec) is 4.0 µm and their active area (A) is 0.1 mm × 0.1 mm. The cut‑on wavelength (λcut-on) can be optimized upon request. Applying a reverse bias (Vb) may significantly increase response speed and dynamic range. While this improves performance at high frequencies, be aware that the 1/f noise appearing in biased detectors may reduce performance at low frequencies. The detectors are available in TO8 and TO66 packages with a 3 deg. wedged sapphire window (wAl2O3) to prevent unwanted interference effects.

Features

Spectral range: 2.3 to 4.4 µm

Back-side illuminated

Two-stage thermoelectrically cooled

No bias required

No 1/f noise

No minimum order quantity required

Applications

Gas detection, monitoring and analysis: CH4, C2H2, CH2O, HCl, NH3, SO2, C2H6, CO2

Breath analysis: C2H6, CH2O, NH3

Explosion prevention

Exhaust gas denitrification

Emission control (exhaust fumes, greenhouse gases)

Contactless temperature measurements (metal industry)

Detector configuration

Detector symbol
PV-2TE-4-0.1x0.1-TO8-wAl2O3-70
PV-2TE-4-0.1x0.1-TO66-wAl2O3-70
Detector type
photovoltaic
Active element material epitaxial HgCdTe heterostructure
Cooling 2TE (Tchip ≅ 230 K)
Temperature sensor thermistor
Active area, A 0.1 mm × 0.1 mm
Optical immersion no
Package 2TE-TO8 2TE-TO66
Acceptance angle, Φ ~70 deg.
Window wAl2O3 (3 deg. wedged sapphire)

Specification

(Tamb = 293 K, Tchip = 230 K, Vb = 0 V)

Parameter Value

Unit
Min. Typ. Max. -
Cut-on wavelength, λcut-on (10%) - 2.3 - μm
Peak wavelength, λpeak - 3.5±0.1 - μm
Specific wavelength, λspec - 4.0 - μm
Cut-off wavelength, λcut-off (10%) - 4.4 - μm
Detectivity, D* (λpeak, 20 kHz) - 5.0×1010 - cm⋅Hz1/2/W
Detectivity, D* (λspec, 20 kHz) 2.0×1010 3.0×1010 - cm⋅Hz1/2/W
Current responsivity, Ripeak) - 1.8 - A/W
Current responsivity, Rispec) 1.0 1.3 - A/W
Time constant, τ - 100 - ns
Dynamic resistance, Rd 30 100 -

Spectral response

(Typ., Tamb = 293 K, Tchip = 230 K)

A graph displaying detectivity (D*) on a logarithmic scale versus wavelength (λ) from 2.0 to 4.5 μm. The detectivity curve rises sharply, peaks around 3 μm, and gradually decreases, highlighting a range of high sensitivity.
form-close

Access to file

Access to this file is limited. In order to download it, please provide all the information and submit the form.

download-icon

Application notes password-padlock

Temperature sensor characteristics

I agree to the processing of personal data with the VIGO Privacy Policy

green-checkmark

Thank you!

This file has been sended to your e-mail.

For more information, please contact us


    SalesSupportService/Complaints

    Detectors ModulesEpi-wafers