home-icon/Products / Infrared detectors / HgCdTe (MCT) Photoconductive / HgCdTe photoconductive IR detectors PCI-3TE-12-1x1-TO8/TO66-wZnSeAR-36

HgCdTe three-stage thermoelectrically cooled optically immersed photoconductive infrared detectorsPCI-3TE-12-1x1-TO8/TO66-wZnSeAR-36

PCI-3TE-12-1x1-TO8-wZnSeAR-36 and PCI-3TE-12-1x1-TO66-wZnSeAR-36 are three-stage thermoelectrically cooled (3TE) photoconductive IR detectors based on HgCdTe heterostructures for optimal performance and stability, optically immersed to enhance the parameters. Their specific wavelength (λspec) is 12.0 µm and their optical area (Ao) is 1 mm × 1 mm. The detectors should operate in optimum bias voltage (Vb) and current readout mode. Performance at low frequencies is reduced due to 1/f noise. The detectors are available in TO8 and TO66 packages with a 3 deg. wedged zinc selenide anti-reflection coated window (wZnSeAR) to prevent unwanted interference effects.

Features

Spectral range: over 14.0 µm

Back-side illuminated

Three-stage thermoelectrically cooled

Unique immersion lens technology applied

No minimum order quantity required

Applications

FTIR spectroscopy

Gas detection, monitoring and analysis: C2H6, NH3

Laser measurements: power monitoring and control, beam profiling and positioning, calibration

Detector configuration

Detector symbol
PCI-3TE-12-1x1-TO8-wZnSeAR-36
PCI-3TE-12-1x1-TO66-wZnSeAR-36
Detector type
photoconductive
Active element material epitaxial HgCdTe heterostructure
Cooling 3TE (Tchip ≅ 210 K)
Temperature sensor thermistor
Active area, A 1 mm × 1 mm
Optical immersion hyperhemisphere
Package 3TE-TO8 3TE-TO66
Acceptance angle, Φ ~36 deg.
Window wZnSeAR (3 deg. wedged zinc selenide, anti-reflection coating)

Specification

(Tamb = 293 K, Tchip = 210 K, Vb = 0.9 V)

Parameter Value
Unit
Min. Typ. Max. -
Peak wavelength, λpeak - 10.6±0.5 - μm
Specific wavelength, λspec - 12.0 - μm
Cut-off wavelength, λcut-off (10%) - 14.0 - μm
Detectivity, D* (λpeak, 20 kHz) 1.6×109 - cm⋅Hz1/2/W
Detectivity, D* (λspec, 20 kHz) 9.0×108 1.2×108 - cm⋅Hz1/2/W
Current responsivity, Ripeak) - 1.0 - A/W
Current responsivity, Rispec) 0.07 0.7 - A/W
Time constant, τ - 5 - ns
Resistance, R - - 200 Ω
Bias voltage, Vb - 0.9 - V
1/f corner frequency, fc - 20 - kHz

Spectral response

(Typ., Tamb = 293 K, Tchip = 210 K)

Graph showing a purple line charting detectivity (D*, cm⋅Hz^1/2/W) against wavelength (λ, µm). Wavelength ranges from 1.6 to 16.0 µm. Detectivity peaks around 10 µm, then declines sharply after 14 µm. The Y-axis is logarithmic.
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Temperature sensor characteristics

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