home-icon/Products / Selected Line / Infrared Detections Modules / Small-size IR detection module based on HgCdTe TE cooled optically immersed phoconductive detector SM-I-12

Small-size IR detection module based on HgCdTe TE cooled optically immersed phoconductive detectorSM-I-12

SM-I-12 is an ultra-small IR detection module. Thermoelectrically cooled, optically immersed photoconductive detector, based on HgCdTe heterostructure (PCI-3TE-12-1×1-TO8-wZnSeAR-36) is integrated with transimpedance, AC coupled preamplifier. There is a possibility to manually adjust gain of the signal. 3° wedged zinc selenide anti-reflection coated window prevents unwanted interference effects. SM-I-12 is easy to assembly in space limited measuring systems of FTIR applications.

Features

Spectral range: 2.0 to 13.8 μm

Frequency bandwidth: 10 Hz to 1 MHz

Adjustable gain

Small size

Quantity discounted price

Fast delivery

No minimum order quantity required

Applications

FTIR spectroscopy

Detection module configuration

Detector symbol PCI-3TE-12-1×1-TO8-wZnSeAR-36
Detector type photoconductive
Active element material epitaxial HgCdTe heterostructure
Optical area, AO 1 mm × 1 mm
Immersion hyperhemisphere
Cooling 3TE
Acceptance angle, Φ ~36 deg.
Window wZnSeAR

(3 deg. wedged zinc selenide anti-reflection coating)

Preamplifier symbol SIP
Preamplifier type transimpedance
Signal output socket MMCX
Power supply and TEC control socket AMP2×4 (part No. 280389-2)
Mounting hole no
Built-in fan no

(external heatsink necessary)

Built-in TEC controller no

Specification

(Tamb = 293 K, Rload = 50 Ω, unless otherwise noted)

Parameter Value Unit
Min. Typ. Max.
Active element temperature, Tchip 210 K
Cut-on wavelength, λcut-on (10%) 2.0 μm
Peak wavelength, λpeak 9.2 10.0 10.2 μm
Cut-off wavelength, λcut-off (10%) 13.8 μm
Detectivity, D* (λpeak, f = 20 kHz) 2.5×109 cm·Hz1/2/w
Detectivity, D* (λopt, f = 20 kHz) 1.3×109 cm·Hz1/2/w
Voltage responsivity, Rvpeak, Ki = 100 kV/A) 1.35×105 V/W
Voltage responsivity, Rvopt, Ki = 100 kV/A) 6.30×104 V/W
Voltage responsivity, Rvpeak, Ki = 55 kV/A) 7.45×104 V/W
Voltage responsivity, Rvopt, Ki = 55 kV/A) 3.45×104 V/W
Low cut-off frequency, flo 10 Hz
High cut-off frequency, fhi 1 MHz
Output impedance, Rout 50 Ω
Output voltage swing, Vout (Rload = 1 MΩ) -10 +10 V
Output voltage offset, Voff ±20 mV
Module power supply voltage (positive), +Vsup +15 V
Module power supply voltage (negative), -Vsup -15 V

Spectral response

(Typ., Tamb = 293 K)

Mechanical layout

(Unit: mm)

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Temperature sensor characteristics

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