HgCdTe (MCT) Photovoltaic Detector

PVM-10.6

2.0 – 13.0 µm, ambient temperature, multiple junction

PVM-10.6 is an uncooled IR photovoltaic multiple junction detector based on sophisticated HgCdTe heterostructure for the best performance and stability. The detector is optimized for the maximum performance at λopt = 13.0 μm. It especially useful as large active area detector operating within 2.0 to 13.0 µm spectral range.

See specification

Features

Spectral range from 2.0 to 13.0 µm

Large active area from 1×1 mm^2 to 4×4 mm^2

Ambient temperature operation

No bias required

No 1/f noise

Operation from DC to high frequency

Sensitive to IR radiation polarisation

Specification (Ta = 20°C)

Parameter
PVM-10.6
Active element material
epitaxial HgCdTe heterostructure
Optimum wavelength λopt, µm
10.6
Detectivity D*(λpeak), cm⋅Hz1/2/W
≥2.0×107
Detectivity D*(λopt), cm⋅Hz1/2/W
≥1.0×107
Current responsivity-active area product Riopt)·L, A·mm/W
≥0.002
Time constant τ, ns
≤1.5
Resistance R, Ω
20 to 150
Active area A, mm×mm
1×1, 2×2, 3×3, 4×4
Package
TO39 BNC
Acceptance angle, Φ
~90° ~102°*)

~124°**)

Window
none

*)  Aperture C = Ø4 mm.

**)  Aperture C = Ø6 mm.

Spectral response (Ta = 20°C)

PVM-10.6-1

Mechanical layout, mm

BNC-non-imm-3-1

BNC package

TO39-non-imm-1-2

TO39 package

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Temperature sensor characteristics

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