HgCdTe (MCT) Photovoltaic Detector

PVI-2TE-6

2.9 – 6.6 µm, two-stage thermoelectrically cooled, optically immersed

PVI-2TE-6 is two-stage thermoelectrically cooled IR photovoltaic detector based on sophisticated HgCdTe heterostructure for the best performance and stability, optically immersed in order to improve parameters of the device. The detector is optimized for the maximum performance at λopt = 6.0 μm. Cut‑on wavelength can be optimized upon request. Reverse bias Vb may significantly increase response speed and dynamic range. It also results in improved performance at high frequencies, but 1/f noise that appears in biased devices may reduce performance at low frequencies. 3° wedged zinc selenide anti-reflection coated (wZnSeAR) window prevents unwanted interference effects.

See specification

Features

High performance in the 2.9 – 6.6 µm spectral range

Two-stage thermoelectrically cooled

Hyperhemiimmersion microlens technology applied

No bias required

No 1/f noise

Specification (Ta = 20°C, Vb = 0 mV)

Parameter
PVI-2TE-6
Active element material
epitaxial HgCdTe heterostructure
Optimum wavelength λopt, µm
6.0
Detectivity D*(λpeak), cm⋅Hz1/2/W
≥7.0×1010
Detectivity D*(λopt), cm⋅Hz1/2/W
≥4.0×1010
Current responsivity Riopt), A/W
≥1.5
Time constant τ, ns
≤50
Resistance-optical area product R⋅AO, Ω⋅cm2
≥2
Active element temperature Tdet, K
~230
Optical area AO, mm×mm
0.5×0.5, 1×1
Package
TO8, TO66
Acceptance angle, Φ
~36°
Window
wZnSeAR

Spectral response (Ta = 20°C, Vb = 0 mV)

PVI-2TE-6-1

Mechanical layout, mm

2TE-TO8-imm-4-4

2TE-TO8 package

2TE-TO66-imm-2-4

2TE-TO66 package

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