HgCdTe (MCT) Photovoltaic Detector

PV-4TE-10.6

3.2 – 12.0 µm, four-stage thermoelectrically cooled

PV-4TE-10.6 is four-stage thermoelectrically cooled IR photovoltaic detector based on sophisticated HgCdTe heterostructure for the best performance and stability. The device is optimized for the maximum performance at λopt = 10.6 μm. Cut‑on wavelength can be optimized upon request. Reverse bias Vb may significantly increase response speed and dynamic range. It also results in improved performance at high frequencies, but 1/f noise that appears in biased devices may reduce performance at low frequencies. 3° wedged zinc selenide anti-reflection coated (wZnSeAR) window prevents unwanted interference effects.

See specification

Features

High performance in the 3.2 – 12.0 µm spectral range

Four-stage thermoelectrically cooled

No bias required

No 1/f noise

Specification (Ta = 20°C, Vb = 0 mV)

Parameter
PV-4TE-10.6
Active element material
epitaxial HgCdTe heterostructure
Optimum wavelength λopt, µm
10.6
Detectivity D*(λpeak), cm⋅Hz1/2/W
≥4.0×108
Detectivity D*(λopt), cm⋅Hz1/2/W
≥2.0×108
Current responsivity Riopt), A/W
≥0.5
Time constant τ, ns
≤25
Resistance-active area product R⋅A, Ω⋅cm2
≥0.0005
Active element temperature Tdet, K
~195
Active area A, mm×mm
0.05×0.05, 0.1×0.1
Package
TO8, TO66
Acceptance angle, Φ
~70°
Window
wZnSeAR

Spectral response (Ta = 20°C, Vb = 0 mV)

PV-4TE-10.6-1

Mechanical layout, mm

4TE-TO8-non-imm-8

4TE-TO8 package

4TE-TO66-non-imm-8

4TE-TO66 package

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