InAsSb superlattice four-stage thermoelectrically-cooled optically immersed photovoltaic infrared detectorPVIA-4TE-13-1x1-TO8-wZnSeAR-36

PVIA-4TE-13-1x1-TO8-wZnSeAR-36 is a four-stage thermoelectrically cooled (4TE) photovoltaic IR detector based on InAs/InAsSb superlattice heterostructure for optimal performance and stability, optically immersed to enhance the parameters. It enables the detection of radiation in the range from 2.0 μm to 13.6 μm. Its optical area (A_o) is 1 mm × 1 mm. The detector is available in the TO8 package with a 3 deg. wedged zinc selenide anti-reflection coating window (wZnSeAR) to prevent unwanted interference effects.

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A cylindrical optical device with a metallic body and protruding pins on one end. The front features a round glass lens with a slight blue tint, and the device is positioned on a plain white background.

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Features

Spectral range: 2.2 to 13.6 µm

III-V material compliant with the RoHS Directive

Unique optical immersion technology applied

Back-side illuminated

Long term stability

Fast response

No minimum order quantity required

Applications

FTIR spectroscopy

Detector configuration

Detector symbol	PVIA-4TE-13-1x1-TO8-wZnSeAR-36
Detector type	photovoltaic
Active element material	epitaxial InAsSb superlattice heterostructure
Cooling	4TE (T_chip ≅ 200 K)
Temperature sensor	thermistor
Optical area, A_o	1 mm × 1 mm
Optical immersion	hyperhemisphere
Package	4TE-TO8
Acceptance angle, Φ	~36 deg.
Window	wZnSeAR (3 deg. wedged zinc selenide, anti-reflection coating)

Specification

(T_amb = 293K, T_chip = 200 K, V_b = 0 V)

Parameter	Typical value			Unit
	Min.	Typ.	Max.	-
Cut-on wavelength, λ_cut-on (10%)	-	-	2.0	μm
Peak wavelength, λ_peak	-	10.5	-	μm
Cut-off wavelength, λ_cut-off (10%)	13.6	-	-	μm
Detectivity, D* (λ_peak, f = 20 kHz)	2.0×10⁹	3.0×10⁹	-	cm·Hz^1/2/W
Current responsivity, R_i (λ_peak)	0.25	0.38	-	A/W
Time constant, τ	-	3	-	ns
Dynamic resistance, R_d	90	120	-	Ω