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InAs/InAsSb superlattice four-stage TE cooled optically immersed photovoltaic infrared detectorPVIA-4TE-13-1×1-TO8-wZnSeAR-36
PVIA-4TE-13-1×1-TO8-wZnSeAR-36 is a four-stage thermoelectrically cooler IR photovoltaic detector based on InAs/InAsSb superlattice heterostructure. It enables the detection of radiation in the range from 2.2 μm to 13.6 μm. The detector element is monolithically integrated with the hiperhemispherical GaAs microlens in order to improve the performance of the device. The detector is mounted in the TO8 package with a 3 deg. wedged zinc selenide anti-reflection coated window. It is mercury and cadmium-free and is fully compliant with the RoHS Directive.
Features
Spectral range: 2.2 to 13.6 µm
III-V material compliant with the RoHS Directive
Unique optical immersion technology applied
Back-side illuminated
Long term stability
Fast response
No minimum order quantity required
Applications
FTIR spectroscopy
Detector configuration
| Detector type | photovoltaic |
| Active element material | epitaxial InAs/InAsSb superlattice heterostructure |
| Optical area, Ao | 1 mm × 1 mm |
| Immersion | hyperhemisphere |
| Cooling | 4TE |
| Temperature sensor | thermistor |
| Package | TO8 |
| Acceptance angle, Φ | ~36 deg. |
| Window | wZnSeAR
(3 deg. wedged zinc selenide, |
Specification
(Tamb = 293K, Tchip = 200 K, Vb = 0 V, unless otherwise noted)
| Parameter | Typical value | Unit | ||
| Min. | Typ. | Max. | – | |
| Active element temperature, Tchip | – | 200 | – | K |
| Cut-on wavelength, λcut-on (10%) | – | – | 2.0 | μm |
| Peak wavelength, λpeak | – | 10.5 | – | μm |
| Cut-off wavelength, λcut-off (10%) | 13.6 | – | – | μm |
| Detectivity, D* (λpeak, f = 20 kHz) | 2.0×109 | 3.0×109 | – | cm·Hz1/2/W |
| Current responsivity, Ri (λpeak) | 0.25 | 0.38 | – | A/W |
| Time constant, τ | – | 3 | – | ns |
| Dynamic resistance, Rd | 90 | 120 | – | Ω |
Spectral response
(Typ., Tamb = 293 K, Tchip = 200 K)
Mechanical layout and pinout
(Unit: mm)
Access to file
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Application notes
Temperature sensor characteristics
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