home-icon/Products / Infrared detectors / InAs and InAsSb detectors / InAs/InAsSb superlattice four-stage TE cooled optically immersed photovoltaic infrared detector PVIA-4TE-13-1×1-TO8-wZnSeAR-36

InAs/InAsSb superlattice four-stage TE cooled optically immersed photovoltaic infrared detectorPVIA-4TE-13-1×1-TO8-wZnSeAR-36

PVIA-4TE-13-1×1-TO8-wZnSeAR-36 is a four-stage thermoelectrically cooler IR photovoltaic detector based on InAs/InAsSb superlattice heterostructure. It enables the detection of radiation in the range from 2.2 μm to 13.6 μm. The detector element is monolithically integrated with the hiperhemispherical GaAs microlens in order to improve the performance of the device. The detector is mounted in the TO8 package with a 3 deg. wedged zinc selenide anti-reflection coated window. It is mercury and cadmium-free and is fully compliant with the RoHS Directive.


Spectral range: 2.2 to 13.6 µm

III-V material compliant with the RoHS Directive

Unique optical immersion technology applied

Back-side illuminated

Long term stability

Fast response

No minimum order quantity required


FTIR spectroscopy

Detector configuration

Detector type photovoltaic
Active element material epitaxial InAs/InAsSb superlattice heterostructure
Optical area, Ao 1 mm × 1 mm
Immersion hyperhemisphere
Cooling 4TE
Temperature sensor thermistor
Package TO8
Acceptance angle, Φ ~36 deg.
Window wZnSeAR

(3 deg. wedged zinc selenide,
anti-reflection coating)


(Tamb = 293K, Tchip = 200 K, Vb = 0 V, unless otherwise noted)

Parameter Typical value Unit
Min. Typ. Max.
Active element temperature, Tchip 200 K
Cut-on wavelength, λcut-on (10%) 2.0 μm
Peak wavelength, λpeak 10.5 μm
Cut-off wavelength, λcut-off (10%) 13.6 μm
Detectivity, D* (λpeak, f = 20 kHz) 2.0×109 3.0×109 cm·Hz1/2/W
Current responsivity, Ripeak) 0.25 0.38 A/W
Time constant, τ 3 ns
Dynamic resistance, Rd 90 120 Ω

Spectral response

(Typ., Tamb = 293 K, Tchip = 200 K)

Mechanical layout and pinout

(Unit: mm)


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Temperature sensor characteristics

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