home-icon/Products / Infrared detectors / InAs and InAsSb detectors / InAsSb superlattice photovoltaic IR detector PVIA-4TE-13-1×1-TO8-wZnSeAR-36

InAsSb superlattice four-stage thermoelectrically-cooled optically immersed photovoltaic infrared detectorsPVIA-4TE-13-1×1-TO8-wZnSeAR-36

PVIA-4TE-13-1×1-TO8-wZnSeAR-36 is a four-stage thermoelectrically cooled (4TE) photovoltaic IR detector based on InAs/InAsSb superlattice heterostructure for optimal performance and stability, optically immersed to enhance the parameters. It enables the detection of radiation in the range from 2.0 μm to 13.6 μm. Its optical area (AO) is 1 mm × 1 mm. The detector is available in the TO8 package with a 3 deg. wedged zinc selenide anti-reflection coating window (wZnSeAR) to prevent unwanted interference effects.


Spectral range: 2.2 to 13.6 µm

III-V material compliant with the RoHS Directive

Unique optical immersion technology applied

Back-side illuminated

Long term stability

Fast response

No minimum order quantity required


FTIR spectroscopy

Detector configuration

Detector symbol
Detector type
Active element material epitaxial InAsSb superlattice heterostructure
Cooling 4TE (Tchip ≅ 200 K)
Temperature sensor thermistor
Optical area, AO 1 mm × 1 mm
Optical immersion hyperhemisphere
Package 4TE-TO8
Acceptance angle, Φ ~36 deg.
Window wZnSeAR (3 deg. wedged zinc selenide, anti-reflection coating)


(Tamb = 293K, Tchip = 200 K, Vb = 0 V)

Parameter Typical value Unit
Min. Typ. Max.
Cut-on wavelength, λcut-on (10%) 2.0 μm
Peak wavelength, λpeak 10.5 μm
Cut-off wavelength, λcut-off (10%) 13.6 μm
Detectivity, D* (λpeak, f = 20 kHz) 2.0×109 3.0×109 cm·Hz1/2/W
Current responsivity, Ripeak) 0.25 0.38 A/W
Time constant, τ 3 ns
Dynamic resistance, Rd 90 120 Ω

Spectral response

(Typ., Tamb = 293 K, Tchip = 200 K)


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Temperature sensor characteristics

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