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InAsSb and HgCdTe IR Detection Modules - Selected Products
InAsSb and HgCdTe IR Detection Modules - Selected Products
| Image | Name | Detector symbol | Active element material | Cooling | Immersion |
Cut-on wavelength (10%)
?
λcut-on(10%), μm |
Peak wavelength
?
λpeak, μm |
Cut-off wavelength (10%)
?
λcut-off(10%), μm |
Optical area
?
Ao, mm×mm |
Detectivity
?
D*(λpeak, 1kHz), cm·Hz1/2/W |
Voltage responsivity
?
Rv(λpeak), V/W |
Low cut-off frequency
?
flo, Hz |
High cut-off frequency
?
fhi, MHz |
Datasheet | Compare |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
AMS3140-01 | PVMA-1TE-5-1x1-TO39-pSiAR-70 | InAsSb | 1TE | no | 2.0 | 4.0 | 5.5 | 1×1 | 2.0×10\(^{9}\) | 4.0×10\(^{2}\) | 0 | 4.0 |
|
|
 |
LabM-I-4 | PVI-2TE-4-1x1-TO8-wAl2O3-36 | HgCdTe | 2TE | yes | 2.3 | 3.5 | 4.4 | 1×1 | 2.7×10\(^{10}\) | 5.0×10\(^{4}\) | 0 | 7.5 |
|
|
|
LabM-I-5 | PVI-2TE-5-1x1-TO8-wAl2O3-36 | HgCdTe | 2TE | yes | 2.7 | 4.4 | 5.6 | 1×1 | 2.8×10\(^{10}\) | 7.9×10\(^{4}\) | 0 | 18.0 |
|
|
|
LabM-I-6-01 | PVI-2TE-6-1x1-TO8-wZnSeAR-36 | HgCdTe | 2TE | yes | 2.6 | 5.2 | 7.0 | 1×1 | 2.5×10\(^{10}\) | 8.2×10\(^{4}\) | 0 | 4.0 |
|
|
|
LabM-I-10.6 | PVMI-4TE-10.6-1x1-TO8-wZnSeAR-36 | HgCdTe | 4TE | yes | 2.0 | 9.0 | 12.0 | 1×1 | 1.4×10\(^{9}\) | 3.2×10\(^{3}\) | 0 | 120.0 |
|
|
|
LabM-I-13 | PVIA-4TE-13-1x1-TO8-wZnSeAR-36 | InAsSb | 4TE | yes | 1.8 | 13.5 | 13.8 | 1×1 | 1.4×10\(^{9}\) | 6.5×10\(^{3}\) | 0 | 75.0 |
|
|
 |
microM-I-5 | PVIA-5-1x1-TO39-NW-36 | InAsSb | no | yes | 2.0 | 3.9 | 5.6 | 1×1 | 8.5×10\(^{9}\) | 3.4×10\(^{4}\) | 0 | 10.0 |
|
|
 |
microM-10.6 | PVM-10.6-1x1-TO39-NW-90 | HgCdTe | no | no | 2.0 | 8.5 | 12.0 | 1×1 | 3.4×10\(^{7}\) | 2.1×10\(^{2}\) | 0 | 10.0 |
|
|
 |
UM-I-10.6 | PVMI-2TE-10.6-1x1-TO8-wZnSeAR-36 | HgCdTe | 2TE | yes | 2.0 | 8.0 | 13.0 | 1×1 | 1.1×10\(^{9}\) | 2.5×10\(^{3}\) | 0 | 100.0 |
|
|
 |
UHSM-10.6 | - | HgCdTe | 4TE | no | 3.0 | 8.0 | 12.0 | 0.05×0.05 | 7.6×10\(^{8}\) | 6.4×10\(^{3}\) | 300 | 1250.0 |
|
|
|
UHSM-I-10.6 | - | HgCdTe | 4TE | yes | 3.0 | 8.0 | 12.0 | 1×1 | 6.7×10\(^{9}\) | 2.7×10\(^{3}\) | 300 | 900.0 |
|
|
 |
SM-I-12 | PCI-3TE-12-1x1-TO8-wZnSeAR-36 | HgCdTe | 3TE | yes | - | 10.0 | 14.0 | 1×1 | 3.4×10\(^{9}\) | 1.5×10\(^{5}\) | 10 | 1.0 |
|
InAsSb and HgCdTe IR Detection Modules - Selected Products
Filter results
Image
Name
Detector symbol
Active element material
Cooling
Immersion
Cut-on wavelength (10%)
λcut-on(10%), μm
Peak wavelength
λpeak, μm
Cut-off wavelength (10%)
λcut-off(10%), μm
Optical area
Ao, mm×mm
Detectivity
D*(λpeak, 1kHz), cm·Hz1/2/W
Voltage responsivity
Rv(λpeak), V/W
Low cut-off frequency
flo, Hz
High cut-off frequency
fhi, MHz
Datasheet
Detector type
PVMA-1TE-5-1x1-TO39-pSiAR-70
Material
InAsSb
Cooling
1TE
Immersion
no
Cut-on wavelength cut-on
2.0
Peak wavelength
4.0
Cut-off wavelength cut-off
5.5
Optical area
1×1
Detectivity
2.0×10\(^{9}\)
Output voltage
4.0×10\(^{2}\)
Low cut-off frequency
0
High cut-off frequency
4.0
Detector type
PVI-2TE-4-1x1-TO8-wAl2O3-36
Material
HgCdTe
Cooling
2TE
Immersion
yes
Cut-on wavelength cut-on
2.3
Peak wavelength
3.5
Cut-off wavelength cut-off
4.4
Optical area
1×1
Detectivity
2.7×10\(^{10}\)
Output voltage
5.0×10\(^{4}\)
Low cut-off frequency
0
High cut-off frequency
7.5
Detector type
PVI-2TE-5-1x1-TO8-wAl2O3-36
Material
HgCdTe
Cooling
2TE
Immersion
yes
Cut-on wavelength cut-on
2.7
Peak wavelength
4.4
Cut-off wavelength cut-off
5.6
Optical area
1×1
Detectivity
2.8×10\(^{10}\)
Output voltage
7.9×10\(^{4}\)
Low cut-off frequency
0
High cut-off frequency
18.0
Detector type
PVI-2TE-6-1x1-TO8-wZnSeAR-36
Material
HgCdTe
Cooling
2TE
Immersion
yes
Cut-on wavelength cut-on
2.6
Peak wavelength
5.2
Cut-off wavelength cut-off
7.0
Optical area
1×1
Detectivity
2.5×10\(^{10}\)
Output voltage
8.2×10\(^{4}\)
Low cut-off frequency
0
High cut-off frequency
4.0
Detector type
PVMI-4TE-10.6-1x1-TO8-wZnSeAR-36
Material
HgCdTe
Cooling
4TE
Immersion
yes
Cut-on wavelength cut-on
2.0
Peak wavelength
9.0
Cut-off wavelength cut-off
12.0
Optical area
1×1
Detectivity
1.4×10\(^{9}\)
Output voltage
3.2×10\(^{3}\)
Low cut-off frequency
0
High cut-off frequency
120.0
Detector type
PVIA-4TE-13-1x1-TO8-wZnSeAR-36
Material
InAsSb
Cooling
4TE
Immersion
yes
Cut-on wavelength cut-on
1.8
Peak wavelength
13.5
Cut-off wavelength cut-off
13.8
Optical area
1×1
Detectivity
1.4×10\(^{9}\)
Output voltage
6.5×10\(^{3}\)
Low cut-off frequency
0
High cut-off frequency
75.0
Detector type
PVIA-5-1x1-TO39-NW-36
Material
InAsSb
Cooling
no
Immersion
yes
Cut-on wavelength cut-on
2.0
Peak wavelength
3.9
Cut-off wavelength cut-off
5.6
Optical area
1×1
Detectivity
8.5×10\(^{9}\)
Output voltage
3.4×10\(^{4}\)
Low cut-off frequency
0
High cut-off frequency
10.0
Detector type
PVM-10.6-1x1-TO39-NW-90
Material
HgCdTe
Cooling
no
Immersion
no
Cut-on wavelength cut-on
2.0
Peak wavelength
8.5
Cut-off wavelength cut-off
12.0
Optical area
1×1
Detectivity
3.4×10\(^{7}\)
Output voltage
2.1×10\(^{2}\)
Low cut-off frequency
0
High cut-off frequency
10.0
Detector type
PVMI-2TE-10.6-1x1-TO8-wZnSeAR-36
Material
HgCdTe
Cooling
2TE
Immersion
yes
Cut-on wavelength cut-on
2.0
Peak wavelength
8.0
Cut-off wavelength cut-off
13.0
Optical area
1×1
Detectivity
1.1×10\(^{9}\)
Output voltage
2.5×10\(^{3}\)
Low cut-off frequency
0
High cut-off frequency
100.0
Detector type
-
Material
HgCdTe
Cooling
4TE
Immersion
no
Cut-on wavelength cut-on
3.0
Peak wavelength
8.0
Cut-off wavelength cut-off
12.0
Optical area
0.05×0.05
Detectivity
7.6×10\(^{8}\)
Output voltage
6.4×10\(^{3}\)
Low cut-off frequency
300
High cut-off frequency
1250.0
Detector type
-
Material
HgCdTe
Cooling
4TE
Immersion
yes
Cut-on wavelength cut-on
3.0
Peak wavelength
8.0
Cut-off wavelength cut-off
12.0
Optical area
1×1
Detectivity
6.7×10\(^{9}\)
Output voltage
2.7×10\(^{3}\)
Low cut-off frequency
300
High cut-off frequency
900.0
Detector type
PCI-3TE-12-1x1-TO8-wZnSeAR-36
Material
HgCdTe
Cooling
3TE
Immersion
yes
Cut-on wavelength cut-on
-
Peak wavelength
10.0
Cut-off wavelength cut-off
14.0
Optical area
1×1
Detectivity
3.4×10\(^{9}\)
Output voltage
1.5×10\(^{5}\)
Low cut-off frequency
10
High cut-off frequency
1.0
Filter results
