home-icon/Products / Infrared Detections Modules / Selected Line / HgCdTe ultra-high-speed LWIR detection module UHSM-I-10.6

Ultra-high-speed IR detection module based on HgCdTe thermoelectrically cooled optically immersed photovoltaic detectorUHSM-I-10.6

UHSM-I-10.6 is a detection module featuring a TE-cooled, optically immersed photovoltaic IR detector based on a HgCdTe heterostructure (PVI-4TE-10.6-1x1), integrated with a transimpedance amplifier and thermoelectric cooler controller in one package.
The UHSM-I-10.6 detection module is a compact, convenient, user-friendly and high-speed solution.

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A compact, black metal electronic device labeled "Vigo Photonics" with a circular lens in the center. It has a serial number section and cooling fins on the side. Made in Poland.

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Features

Spectral range: 3.0 to 12.0 µm

Frequency bandwidth: 300 Hz to 900 MHz (typ.)

High performance and reliability

DC monitor

Integrated TEC controller and fan

M4 mounting hole

Compatible with optical accessories

Quantity discounted price

Fast delivery

No minimum order quantity required

Applications

Dual-comb spectroscopy

Heterodyne detection

Characterization of pulsed laser sources

LIDARs

Object scanners

Time-resolved fluorescence spectroscopy systems

Free-space optical communication

Telemetry

Detection module configuration

Detection module symbol UHSM-I-10.6
Detector type photovoltaic
Active element material epitaxial HgCdTe heterostructure
Opticalarea, AO 1 mm × 1 mm
Optical immersion hyperhemisphere
Cooling 4TE (Tchip≅215K)
Acceptance angle, Φ ~36 deg.
Window wZnSeAR (3 deg. wedged zinc selenide, anti-reflection coating)
Amplifier type ultra-high-speed, transimpedance
Signal output socket SMA
DC monitor output socket SMA
Power supply socket DC 2.1/5.5

Specification

(Tamb = 293 K, Tchip = 215 K, Rload = 50 Ω, unless otherwise noted)

Parameter Test conditions, remarks Value Unit
Min. Typ. Max. -
Active element temperature, Tchip - 215 - K
Cut-on wavelength, λcut-on (10%) At 10% of the peak responsivity - 3.0 - µm
Peak wavelength, λpeak - 8.0±1.0 - µm
Specific wavelength, λspec - 10.6 - µm
Cut-off wavelength, λcut-off (10%) At 10% of the peak responsivity - 12.0 - µm
Detectivity, D* At λ=λpeak, f=100MHz

At λ=λspec, f=100MHz

 -

2.0×109

 6.7×109

5.0×109

 -

-

 cm×Hz1/2/W
Output noise voltage density, vn At f=100MHz - - 70 nV/Hz1/2
Voltage responsivity, Rv At λ=λpeak

At λ=λspec

 -

7.0×102

 2.7×103

2.0×103

 -

-

 V/W
Voltage responsivity, Rv At λ = λpeak, DC monitor

At λ = λpeak, DC monitor

 3.8×103

2.7×102

 -

-

 -

-

 V/W
1/f corner frequency, fc - - 10 MHz
Low cut-off frequency, flo - 300 - Hz
High cut-off frequency, fhi 0.7 0.9 - GHz
Low cut-off frequency, flo DC monitor - 0 - Hz
High cut-off frequency, fhi DC monitor - 260 - Hz
Output impedance, Rout - 50 - Ω
Output voltage swing, Vout - - ±1 V
Output voltage offset, Voff - - ±20 mV
Power supply voltage, Vsup - 9 - V
Power supply current consumption, Isup - - 1.2 A
Weight - 235 - g

Spectral response

(Typ., Tamb = 293 K, Tchip = 215 K)

A graph showing detectivity (D*, cm·Hz^1/2/W) versus wavelength (λ, µm). The curve rises sharply around 2 µm, stays relatively flat between 3 and 10 µm, and drops steeply after 11 µm. The y-axis ranges from 1E+9 to 1E+10.

Mechanical layout (unit: mm)

Technical drawing of a DC monitor device, showing multiple views with measurements. Labels include "DC monitor," "Power supply," "Signal output," "Power switch," and "Focal plane." Dimensions and detailed components are indicated.
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Temperature sensor characteristics

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