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HgCdTe two-stage thermoelectrically cooled optically immersed photovoltaic multi-junction infrared detectorsPVMI-2TE-10.6-1x1-TO8/TO66-wZnSeAR-36
PVMI-2TE-10.6-1x1-TO8-wZnSeAR-36 and PVMI-2TE-10.6-1x1-TO66-wZnSeAR-36 are two-stage thermoelectrically cooled (2TE) photovoltaic multi-junction IR detectors based on HgCdTe heterostructures for optimal performance and stability, optically immersed to enhance the parameters. Their specific wavelength (λspec) is 10.6 µm and their optical area (Ao) is 1 mm × 1 mm. The detectors are available in TO8 and TO66 packages with a 3 deg. wedged zinc selenide anti-reflection coated window (wZnSeAR) to prevent unwanted interference effects.
Features
Spectral range: 2.0 to 13.0 µm
Back-side illuminated
Fast response
Two-stage thermoelectrically cooled
Unique immersion lens technology applied
No bias required
No 1/f noise
No minimum order quantity required
Applications
Gas detection, monitoring and analysis: SO2, NH3, SF6
CBRN threats detection
CO2 laser measurements: power monitoring and control, beam profiling and positioning, calibration
Free-space optical communication
FTIR spectroscopy
Bacteria identification in medicine
Dentistry
Glucose sensing
Detector configuration
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Detector symbol
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PVMI-2TE-10.6-1x1-TO8-wZnSeAR-36 |
PVMI-2TE-10.6-1x1-TO66-wZnSeAR-36 |
|
Detector type
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photovoltaic, multi-junction |
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| Active element material | epitaxial HgCdTe heterostructure | |
| Cooling | 2TE (Tchip ≅ 230 K) | |
| Temperature sensor | thermistor | |
| Optical area, Ao | 1 mm × 1 mm | |
| Optical immersion | hyperhemisphere | |
| Package | 4TE-TO8 | 4TE-TO66 |
| Acceptance angle, Φ | ~36 deg. | |
| Window | wZnSeAR (3 deg. wedged zinc selenide, anti-reflection coating) | |
Specification
(Tamb = 293 K, Tchip = 230 K, Vb = 0 V)
| Parameter | Value |
Unit | |||
| Min. | Typ. | Max. | - | ||
| Cut-on wavelength, λcut-on (10%) | - | 2.0 | - | μm | |
| Peak wavelength, λpeak | - | 8.0±1.0 | - | μm | |
| Specific wavelength, λspec | - | 10.6 | - | μm | |
| Cut-off wavelength, λcut-off (10%) | - | 13.0 | - | μm | |
| Detectivity, D* (λpeak, 20 kHz) | - | 2.0×109 | - | cm⋅Hz1/2/W | |
| Detectivity, D* (λspec, 20 kHz) | 1.0×109 | - | - | cm⋅Hz1/2/W | |
| Current responsivity, Ri (λpeak) | - | 0.2 | - | A/W | |
| Current responsivity, Ri (λspec) | 0.1 | 0.12 | - | A/W | |
| Time constant, τ | - | 3 | - | ns | |
| Dynamic resistance, Rd | 90 | 120 | - | Ω | |
Spectral response
(Typ., Tamb = 293 K, Tchip = 230 K)
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Application notes
Temperature sensor characteristics
Related products
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