HgCdTe photoconductive infrared detector optimized for operation at 77 KPC-LN2-16.6-1x1-VFP-NW-50
PC-LN2-16.6-1x1-VFP-NW-50 is a photoconductive IR detector based on HgCdTe heterostructures for optimal performance and stability. This detector is optimized for operation at cryogenic temperatures, typically at 77 K (liquid nitrogen temperature). Its 10% cut-off wavelength (λcut-off) is 18.1 µm and its active area (A) is 1 mm × 1 mm. The detector should operate in optimum bias current (Ib) and voltage readout mode. Performance at low frequencies is reduced due to 1/f noise. The detector is available in an especially designed flatpack package (without a window) for easy self-assembly in LN2 metal dewars. This detector is widely used in demanding applications requiring exceptional sensitivity and wide spectral range.

Features
Spectral range: over 18.0 µm
Large active area
Front-side illuminated
Active element material optimized for operation at 77 K
Especially designed flatpack package (without window) for easy self-assembly in LN2 metal dewars
Possible assembly in LN2 metal dewars (Kadel KR163-FSMA2, Kadel KR-323) by VIGO Photonics (on request)
Possible assembly of temperature sensor
Active area dimension 0.25 mm × 0.25 mm available (on request)
Other acceptance angle values available (on request)
Applications
FTIR spectroscopy
Detector configuration
Detector symbol
|
PC-LN2-16.6-1x1-VFP-NW-50 |
|
Detector type
|
photoconductive |
|
Active element material | epitaxial HgCdTe heterostructure | |
Cooling | LN2
(for operation in 77 K) |
|
Temperature sensor | no | |
Active area, A | 1 mm × 1 mm | |
Optical immersion | no | |
Package | VFP
(flatpack) |
|
Acceptance angle, Φ | ~50 deg. | |
Window | no |
Specification
(Tamb = 293 K, Tchip = 77 K, Ib = 15 mA)
Parameter | Value |
Unit | |||
Min. | Typ. | Max. | - | ||
Peak wavelength, λpeak | - | 14.3 | - | μm | |
Cut-off wavelength, λcut-off (10%) | - | 18.1 | - | μm | |
Detectivity, D* (λpeak, 20 kHz) | - | 1.5×1010 | - | cm⋅Hz1/2/W | |
Voltage responsivity, Ri (λpeak) | - | 500 | - | V/W | |
Resistance, R | - | 40 | - | Ω | |
Bias current, Ib | - | 15 | - | mA |
Spectral response
(Tamb = 293 K, Tchip = 77 K, Ib = 15 mA)

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Application notes