InAs room temperature photovoltaic infrared detectorPVA-3-d1.2-SMD-BPF3330-B150-115
PVA-3-d1.2-SMD-BPF3330-B150-115 is an uncooled photovoltaic IR detector based on InAs heterostructure for optimal performance and stability. The diameter (dA) of its active element is 1.2 mm. The detector is available in the SMD package with an optical filter (λcwl = 3330 nm, filter bandwidth = 150 nm) for detecting CH4 and C2H6 gases.

Features
RoHS-compliant III-V material
Large active area
Front-side illuminated
High ambient operating and storage temperature
Compact, surface mount type ceramic package
Compatible with lead-free solder reflow
No minimum order quantity required
Applications
Gas detection, monitoring and analysis: CH4, C2H6
Combustion process control
Green energy
Medical laser control
Detector configuration
Detector symbol | PVA-3-d1.2-SMD-BPF3330-B150-115 | |
Detector type | photovoltaic | |
Active element material | epitaxial InAs heterostructure | |
Cooling | no | |
Temperature sensor | n/a | |
Active area diameter, dA | 1.2 mm | |
Immersion | no | |
Package | SMD | |
Acceptance angle, Φ | ≥115 deg. | |
Window | planar with filter
(λcwl = 3330 nm, filter bandwidth = 150 nm) |
Specification
(Tamb = Tchip = 293 K, Vb = 0 V)
Parameter | Value | Unit | ||
Min. | Typ. | Max. | - | |
Peak wavelength, λpeak | - | 3.33 | - | μm |
Detectivity, D* (λpeak, f = 20 kHz) | 3.2×109 | 4.5×109 | - | cm·Hz1/2/W |
Current responsivity, Ri (λpeak) | 0.52 | 0.62 | - | A/W |
Time constant, τ | - | 35 | 45 | ns |
Dynamic resistance, Rd | 50 | 70 | - | Ω |
Spectral response
(Typ., Tamb = Tchip = 293 K)

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Application notes