HgCdTe three-stage thermoelectrically cooled optically immersed photovoltaic infrared detectorsPVI-3TE-5-1x1-TO8/TO66-wAl2O3-36

PVI-3TE-5-1x1-TO8-wAl₂O₃-36 and PVI-3TE-5-1x1-TO66-wAl₂O₃-36 are three-stage thermoelectrically cooled (3TE) photovoltaic IR detectors based on HgCdTe heterostructures for optimal performance and stability, optically immersed to enhance the parameters. Their specific wavelength (λ_spec) is 5.0 µm and their optical area (A_o) is 1 mm × 1 mm. The cut‑on wavelength (λ_cut-on) can be optimized upon request. Applying a reverse bias (V_b) may significantly increase response speed and dynamic range. While this improves performance at high frequencies, be aware that the 1/f noise appearing in biased detectors may reduce performance at low frequencies. The detectors are available in TO8 and TO66 packages with a 3 deg. wedged sapphire window (wAl₂O₃) to prevent unwanted interference effects.

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Features

Spectral range: 2.7 to 5.5 µm

Back-side illuminated

Three-stage thermoelectrically cooled

Unique immersion lens technology applied

No bias required

No 1/f noise

No minimum order quantity required

Applications

Contactless temperature measurement: railway transport, industrial and laboratory processes monitoring

Flame and explosion detection

Threat warning systems

Heat-seeking, thermal signature detection

Dentistry

Gas detection, monitoring and analysis: CH4, C2H2, CH2O, HCl, NH3, SO2, C2H6, CO, CO2, NOx

Breath analysis: C2H6, CH2O, NH3, NO, OCS

Gas leak detection

Combustion process control

Non-destructive material testing

Detector configuration

Detector symbol	PVI-3TE-5-1x1-TO8-wAl₂O₃-36	PVI-3TE-5-1x1-TO66-wAl₂O₃-36
Detector type	photovoltaic
Active element material	epitaxial HgCdTe heterostructure
Cooling	3TE (T_chip ≅ 210 K)
Temperature sensor	thermistor
Optical area, A_o	1 mm × 1 mm
Optical immersion	hyperhemisphere
Package	3TE-TO8	3TE-TO66
Acceptance angle, Φ	~36 deg.
Window	wAl₂O₃ (3 deg. wedged sapphire)

Specification

(T_amb = 293 K, T_chip = 210 K, V_b = 0 V)

Parameter	Value			Unit
	Min.	Typ.	Max.	-
Cut-on wavelength, λ_cut-on (10%)	-	2.7	-	μm
Peak wavelength, λ_peak	-	4.4±0.2	-	μm
Specific wavelength, λ_spec	-	5.0	-	μm
Cut-off wavelength, λ_cut-off (10%)	-	5.5	-	μm
*Detectivity, D (λ_peak, 20 kHz)**	-	2.3×10¹¹	-	cm⋅Hz^1/2/W
*Detectivity, D (λ_spec, 20 kHz)**	9.0×10¹⁰	1.5×10¹¹	-	cm⋅Hz^1/2/W
Current responsivity, R_i (λ_peak)	-	2.1	-	A/W
Current responsivity, R_i (λ_spec)	1.2	1.5	-	A/W
Time constant, τ	-	80	-	ns
Dynamic resistance, R_d	4	15	-	kΩ