home-icon/Products / Infrared detectors / HgCdTe (MCT) Photovoltaic / HgCdTe photovoltaic IR detectors PVI-3TE-10.6-0.5x0.5-TO8/TO66-wZnSeAR-36

HgCdTe three-stage thermoelectrically cooled optically immersed photovoltaic infrared detectorsPVI-3TE-10.6-0.5x0.5-TO8/TO66-wZnSeAR-36

PVI-3TE-10.6-0.5x0.5-TO8-wZnSeAR-36 and PVI-3TE-10.6-0.5x0.5-TO66-wZnSeAR-36 are three-stage thermoelectrically cooled (3TE) photovoltaic IR detectors based on HgCdTe heterostructures for optimal performance and stability, optically immersed to enhance the parameters. Their specific wavelength (λspec) is 10.6 µm and their optical area (Ao) is 0.5 mm × 0.5 mm. The cut‑on wavelength (λcut-on) can be optimized upon request. Applying a reverse bias (Vb) may significantly increase response speed and dynamic range. While this improves performance at high frequencies, be aware that the 1/f noise appearing in biased detectors may reduce performance at low frequencies. The detectors are available in TO8 and TO66 packages with a 3 deg. wedged zinc selenide anti-reflection coated window (wZnSeAR) to prevent unwanted interference effects.

Features

Spectral range: 3.0 to 12.0 µm

Back-side illuminated

Three-stage thermoelectrically cooled

Unique immersion lens technology applied

No bias required

No 1/f noise

No minimum order quantity required

Applications

Gas detection, monitoring and analysis: SO2, NH3, SF6

CBRN threats detection

CO2 laser measurements: power monitoring and control, beam profiling and positioning, calibration

Free-space optical communication

FTIR spectroscopy

Bacteria identification in medicine

Dentistry

Glucose sensing

Detector configuration

Detector symbol
PVI-3TE-10.6-0.5x0.5-TO8-wZnSeAR-36
PVI-3TE-10.6-0.5x0.5-TO66-wZnSeAR-36
Detector type
photovoltaic
Active element material epitaxial HgCdTe heterostructure
Cooling 3TE (Tchip ≅ 210 K)
Temperature sensor thermistor
Optical area, Ao 0.5 mm × 0.5 mm
Optical immersion hyperhemisphere
Package 3TE-TO8 3TE-TO66
Acceptance angle, Φ ~36 deg.
Window wZnSeAR (3 deg. wedged zinc selenide, anti-reflection coating)

Specification

(Tamb = 293 K, Tchip = 210 K, Vb = 0 V)

Parameter Value

Unit
Min. Typ. Max. -
Cut-on wavelength, λcut-on (10%) - 3.0 - μm
Peak wavelength, λpeak - 8.0±1.0 - μm
Specific wavelength, λspec - 10.6 - μm
Cut-off wavelength, λcut-off (10%) - 12.0 - μm
Detectivity, D* (λpeak, 20 kHz) - 2.0×109 - cm⋅Hz1/2/W
Detectivity, D* (λspec, 20 kHz) 1.5×109 - - cm⋅Hz1/2/W
Current responsivity, Ripeak) - 0.9 - A/W
Current responsivity, Rispec) 0.7 0.9 - A/W
Time constant, τ - 10 - ns
Dynamic resistance, Rd 20 50 - Ω

Spectral response

(Typ., Tamb = 293 K, Tchip = 210 K)

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