English
Polski
HgCdTe three-stage thermoelectrically cooled optically immersed photoconductive infrared detectorsPCI-3TE-12-1x1-TO8-wZnSeAR-36
PCI-3TE-12-1x1-TO8-wZnSeAR-36 is a three-stage thermoelectrically cooled (3TE) photoconductive IR detector based on HgCdTe heterostructures for optimal performance and stability, optically immersed to enhance the parameters. Its specific wavelength (λspec) is 12.0 µm and its optical area (Ao) is 1 mm × 1 mm. The detector should operate in optimum bias voltage (Vb) and current readout mode. Performance at low frequencies is reduced due to 1/f noise. The detector is available in TO8 package with a 3 deg. wedged zinc selenide anti-reflection coated window (wZnSeAR) to prevent unwanted interference effects.
Features
Spectral range: over 14.0 µm
Back-side illuminated
Three-stage thermoelectrically cooled
Unique immersion lens technology applied
No minimum order quantity required
Applications
FTIR spectroscopy
Gas detection, monitoring and analysis: C2H6, NH3
Laser measurements: power monitoring and control, beam profiling and positioning, calibration
Detector configuration
|
Detector symbol
|
PCI-3TE-12-1x1-TO8-wZnSeAR-36 |
|
|
Detector type
|
photoconductive |
|
| Active element material | epitaxial HgCdTe heterostructure | |
| Cooling | 3TE (Tchip ≅ 210 K) | |
| Temperature sensor | thermistor | |
| Active area, A | 1 mm × 1 mm | |
| Optical immersion | hyperhemisphere | |
| Package | 3TE-TO8 | |
| Acceptance angle, Φ | ~36 deg. | |
| Window | wZnSeAR (3 deg. wedged zinc selenide, anti-reflection coating) | |
Specification
(Tamb = 293 K, Tchip = 210 K, Vb = 0.9 V)
| Parameter | Value |
Unit | |||
| Min. | Typ. | Max. | - | ||
| Peak wavelength, λpeak | - | 10.6±0.5 | - | μm | |
| Specific wavelength, λspec | - | 12.0 | - | μm | |
| Cut-off wavelength, λcut-off (10%) | - | 14.0 | - | μm | |
| Detectivity, D* (λpeak, 20 kHz) | 1.6×109 | - | cm⋅Hz1/2/W | ||
| Detectivity, D* (λspec, 20 kHz) | 9.0×108 | 1.2×108 | - | cm⋅Hz1/2/W | |
| Current responsivity, Ri (λpeak) | - | 1.0 | - | A/W | |
| Current responsivity, Ri (λspec) | 0.07 | 0.7 | - | A/W | |
| Time constant, τ | - | 5 | - | ns | |
| Resistance, R | - | - | 200 | Ω | |
| Bias voltage, Vb | - | 0.9 | - | V | |
| 1/f corner frequency, fc | - | 20 | - | kHz | |
Spectral response
(Typ., Tamb = 293 K, Tchip = 210 K)
Access to file
Access to this file is limited. In order to download it, please provide all the information and submit the form.
Application notes
Temperature sensor characteristics
Related products
For more information, please contact us
