home-icon/Products / Infrared detectors / HgCdTe (MCT) Photoconductive / HgCdTe photoconductive IR detector PCI-3TE-12-1x1-TO8-wZnSeAR-36

HgCdTe three-stage thermoelectrically cooled optically immersed photoconductive infrared detectorsPCI-3TE-12-1x1-TO8-wZnSeAR-36

PCI-3TE-12-1x1-TO8-wZnSeAR-36 is a three-stage thermoelectrically cooled (3TE) photoconductive IR detector based on HgCdTe heterostructures for optimal performance and stability, optically immersed to enhance the parameters. Its specific wavelength (λspec) is 12.0 µm and its optical area (Ao) is 1 mm × 1 mm. The detector should operate in optimum bias voltage (Vb) and current readout mode. Performance at low frequencies is reduced due to 1/f noise. The detector is available in TO8 package with a 3 deg. wedged zinc selenide anti-reflection coated window (wZnSeAR) to prevent unwanted interference effects.

Features

Spectral range: over 14.0 µm

Back-side illuminated

Three-stage thermoelectrically cooled

Unique immersion lens technology applied

No minimum order quantity required

Applications

FTIR spectroscopy

Gas detection, monitoring and analysis: C2H6, NH3

Laser measurements: power monitoring and control, beam profiling and positioning, calibration

Detector configuration

Detector symbol
PCI-3TE-12-1x1-TO8-wZnSeAR-36
Detector type
photoconductive
Active element material epitaxial HgCdTe heterostructure
Cooling 3TE (Tchip ≅ 210 K)
Temperature sensor thermistor
Active area, A 1 mm × 1 mm
Optical immersion hyperhemisphere
Package 3TE-TO8
Acceptance angle, Φ ~36 deg.
Window wZnSeAR (3 deg. wedged zinc selenide, anti-reflection coating)

Specification

(Tamb = 293 K, Tchip = 210 K, Vb = 0.9 V)

Parameter Value
Unit
Min. Typ. Max. -
Peak wavelength, λpeak - 10.6±0.5 - μm
Specific wavelength, λspec - 12.0 - μm
Cut-off wavelength, λcut-off (10%) - 14.0 - μm
Detectivity, D* (λpeak, 20 kHz) 1.6×109 - cm⋅Hz1/2/W
Detectivity, D* (λspec, 20 kHz) 9.0×108 1.2×108 - cm⋅Hz1/2/W
Current responsivity, Ripeak) - 1.0 - A/W
Current responsivity, Rispec) 0.07 0.7 - A/W
Time constant, τ - 5 - ns
Resistance, R - - 200 Ω
Bias voltage, Vb - 0.9 - V
1/f corner frequency, fc - 20 - kHz

Spectral response

(Typ., Tamb = 293 K, Tchip = 210 K)

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Temperature sensor characteristics

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