HgCdTe photoconductive infrared detector optimized for operation at 77 KPC-LN2-19-1x1-VFP-KR163-wZnSeAR-50
PC-LN2-19-1x1-VFP-KR163-wZnSeAR-50 is a photoconductive IR detector based on HgCdTe heterostructures for optimal performance and stability. This detector is optimized for operation at cryogenic temperatures, typically at 77 K (liquid nitrogen temperature). Its 10% cut-off wavelength (λcut-off) is 20.0 µm and its active area (A) is 1 mm × 1 mm. The detector should operate in optimum bias current (Ib) and voltage readout mode. Performance at low frequencies is reduced due to 1/f noise. The detector is mounted in a Kadel KR163-FSMA2 dewar with a 3 deg. wedged zinc-selenide anti-reflection-coated window. This detector is widely used in demanding applications requiring exceptional sensitivity and a wide spectral range.
 
                
            Features
Spectral range: over 20.0 µm
Large active area
Front-side illuminated
Active element material optimized for operation at 77 K
Possible assembly of temperature sensor
Active area dimension 0.25 mm × 0.25 mm available (on request)
Other acceptance angle values available (on request)
Applications
FTIR spectroscopy
Detector configuration
| Detector symbol | PC-LN2-19-1x1-VFP-KR163-wZnSeAR-50 | |
| Detector type | photoconductive | |
| Active element material | epitaxial HgCdTe heterostructure | |
| Cooling | LN2 (Tchip≅77K) | |
| Temperature sensor | no | |
| Active area, A | 1 mm × 1 mm | |
| Optical immersion | no | |
| Package | VFP-KR163 | |
| Acceptance angle, Φ | ~50 deg. | |
| Window | no | |
Specification
(Tamb = 293 K, Tchip = 77 K, Ib = 15 mA)
| Parameter | Value | Unit | |||
| Min. | Typ. | Max. | - | ||
| Peak wavelength, λpeak | - | 16.0 | - | μm | |
| Cut-off wavelength, λcut-off (10%) | - | ≥20.0 | - | μm | |
| Detectivity, D* (λpeak, 20 kHz) | - | 1.0×1010 | - | cm⋅Hz1/2/W | |
| Voltage responsivity, Ri (λpeak) | - | 170 | - | V/W | |
| Resistance, R | - | 25 | - | Ω | |
| Bias current, Ib | - | 15 | - | mA | |
Spectral response
(Tamb = 293 K, Tchip = 77 K, Ib = 15 mA)
 
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                    Application notes
                         
                
 
                                     
                                     
                 
                 
     
     
     
     
    