Photovoltaic infrared detector in which the semiconductor element is made of InGaAs material with cut-off wavelength 1.7 µm.
This detector is cadmium and mercury free. As a result, the detector comply with the RoHS Directive.
InGaAs IR detectors
Active element material
Active area diameter
Cut-off wavelength (10%)
Ri (λ= 1.55 μm), A/W
D* (λ= 1.55 μm , f = 20 kHz), cm⋅Hz1/2/W
3 dB bandwidth