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InGaAs Detectors

Photovoltaic infrared detector in which the semiconductor element is made of InGaAs material with cut-off wavelength 1.7 µm.

This detector is cadmium and mercury free. As a result, the detector comply with the RoHS Directive.

InGaAs IR detectors

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Image

Name

Active element material

Cooling

Immersion

Active area diameter

?

mm

peak_wavelength

?

λpeak, μm

Cut-off wavelength (10%)

?

λcut-off, μm

Current responsivity

?

Ri (λ= 1.55 μm), A/W

Detectivity

?

D* (λ= 1.55 μm , f = 20 kHz), cm⋅Hz1/2/W

3 dB bandwidth

?

MHz

Package

Window

Datasheet

Material

InGaAs

Cooling

Uncooled

Immersion

no

Active area

1

peak_wavelength

1.59

Cut-off wavelength cut-off

1.7

responsivity

1.02

Detectivity

6.0×10\(^{11}\)

Bandwidth

250

Package

TO39

Window

wAl2O3

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