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InGaAs Detectors
Photovoltaic infrared detector in which the semiconductor element is made of InGaAs material with cut-off wavelength 1.7 µm.
This detector is cadmium and mercury free. As a result, the detector comply with the RoHS Directive.
InGaAs IR detectors
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Image
Name
Active element material
Cooling
Immersion
Active area diameter
?
mm
Peak wavelength
?
λpeak, μm
Cut-off wavelength (10%)
?
λcut-off, μm
Current responsivity
?
Ri (λ= 1.55 μm), A/W
Detectivity
?
D* (λ= 1.55 μm , f = 20 kHz), cm⋅Hz1/2/W
3 dB bandwidth
?
MHz
Package
Window
Datasheet
Material
InGaAs
Cooling
no
Immersion
no
Active area
1
Peak wavelength
1.59
Cut-off wavelength cut-off
1.7
Responsivity
1.02
Detectivity
6.0×10\(^{11}\)
Bandwidth
250
Package
TO39
Window
wAl2O3
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