HgCdTe (MCT) Photovoltaic DetectorPVI-2TE-4-1×1-TO8-wAl2O3-36

2.4 – 4.3 µm, ambient temperature, optically immersed

PVI-2TE-4-1×1-TO8-wAl₂O₃-36 is two-stage thermoelectrically cooled IR photovoltaic detector based on sophisticated HgCdTe heterostructure for the best performance and stability. The device is optimized for the maximum performance at λ_opt = 4.0 µm. Detector element is monolithically integrated with hyperhemispherical GaAs microlens in order to improve performance of the device. Reverse bias V_b may significantly increase response speed and dynamic range. It also results in improved performance at high frequencies, but 1/f noise that appears in biased devices may reduce performance at low frequencies. 3° wedged sapphire (wAl₂O₃) window prevents unwanted interference effects.

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Features

High performance in 2.4 – 4.3 µm spectral range

Two-stage thermoelctrically cooled

Hyperhemiimmersion microlens technology applied

No bias required

No 1/f noise

D* better by one order of magnitude compared with the same type uncooled detector

Wide dynamic range

Quantity discounted price

Fast delivery

Applications

Gas detection, monitoring and analysis (CH4, C2H2, CH2O, HCl, NH3, SO2, C2H6)

Breath analysis

Explosion prevention

Flue gas denitrification

Emission control (exhaust fumes, greenhouse gases)

Specification (T_a = 20°C, Vb = 0 mV)

Parameter	PVI-2TE-4-1×1-TO8-wAl₂O₃-36
Active element material	epitaxial HgCdTe heterostructure
Cut-on wavelength λ_cut-on (10%) µm	2.4±0.5
Peak wavelength λ_peak, µm	3.5±0.5
Optimum wavelength λ_opt, µm	4.0
Cut-off wavelength λ_cut-off (10%) µm	4.3±0.3
*Detectivity D(λ_peak), cm⋅Hz^1/2/W**	≥4.0×10¹¹
*Detectivity D(λ_opt), cm⋅Hz^1/2/W**	≥3.0×10¹¹
Current responsivity R_i(λ_peak), A/W	≥2.0
Current responsivity R_i(λ_opt), A/W	≥1.3
Time constant τ, ns	≤100
Resistance R, Ω	≥20000
Active element temperature T_det, K	~230
Optical area A_O, mm×mm	1×1
Package	TO8
Acceptance angle, Φ	~36°
Window	wAl₂O₃