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InGaAs room-temperature infrared detection module with an integrated ASIC-type amplifierIC01410-01

IC01410-01 is a detection module featuring an uncooled photovoltaic IR detector chip based on an InGaAs heterostructure, integrated with an ASIC-type (application-specific integrated circuit), transimpedance amplifier. This module has a TO39 cap featuring a 3 deg. wedged sapphire window.

Features

Cut-off wavelength: 1.7 μm

RoHS-compliant III-V material

Anti-reflection coating on the active element

Front-side illuminated

ASIC-type electronics

Programmable gain

DC coupling (AC coupling on request)

Compact, surface-mount type package

Long-term stability and reliability

High ambient operating and storage temperature

Low power consumption

Possibility of mounting optical filter

Applications

Gas detection, monitoring and analysis: CH4

Telecommunication

LIDARs

Laser range finders, laser warning systems

Lasers and diodes life tests

Food analysis

Pharmaceutical analysis

Specification

(Tamb = 293 K, Rload = 50 Ω)

Parameter Test conditions, remarks Value Unit
Min. Typ. Max. -
Active element temperature, Tchip Tchip =   Tamb - 293 - K
Peak wavelength, λpeak - 1.62±0.03 - µm
Cut-off wavelength, λcut-off (10%) At 10% of the peak responsivity 1.69 1.71 - µm
Detectivity, D* At λ=λpeak, f=10kHz - 2.5×1010 - cm×Hz1/2/W
Output noise voltage density, vn At f=10kHz - 910 - nV/Hz1/2
Voltage responsivity, Rv At λ=λpeak - 2.56×105 - V/W
Transimpedance, Ki 256 - 10 000 kV/A
Low cut-off frequency, flo DC coupling - 0 - Hz
High cut-off frequency, fhi - 1 - MHz
Output impedance, Rout - 50 -
Reference voltage output, Vref - 1 - V
Power supply voltage, +Vsup - 3.3 - V
Power consumption, P - 0.15 - W

Spectral response

(Typ, Tamb = 293 K)

Line graph showing detectivity (D*) on a logarithmic scale from 1E+08 to 1E+11 against wavelength (λ) in micrometers (1.0 to 1.8). The detectivity peaks around 1.6 micrometers and decreases thereafter.
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Temperature sensor characteristics

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