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InAs room-temperature infrared detection module with an integrated ASIC-type amplifierIC02320-01

IC02320-01 is a detection module featuring an uncooled photovoltaic IR detector chip based on an InAs heterostructure, integrated with an ASIC-type (application-specific integrated circuit), transimpedance amplifier. This module has a square-shaped cap featuring a 3 deg. wedged sapphire window.

Features

Spectral range: 2.3 to 3.5 μm

RoHS-compliant III-V material

Front-side illuminated

ASIC-type electronics

Programmable gain

DC coupling (AC coupling on request)

Compact, surface-mount type package

Long-term stability and reliability

High ambient operating and storage temperature

Low power consumption

Possibility of mounting optical filter

Applications

Gas detection, monitoring and analysis: H2O, HF, CH4, C2H2, C2H4, C2H6, NH3

Combustion process control

Green energy

Medical laser control

Specification

(Tamb = 293 K, Rload = 50 Ω)

Parameter Test conditions, remarks Value Unit
Min. Typ. Max. -
Active element temperature, Tchip Tchip =   Tamb - 293 - K
Cut-on wavelength, λcut-on (10%) At 10% of the peak responsivity - 2.3 - µm
Peak wavelength, λpeak - 3.1 - µm
Cut-off wavelength, λcut-off (10%) At 10% of the peak responsivity - 3.5 - µm
Detectivity, D* At λ=λpeak, f=10kHz - 6.0×109 - cm×Hz1/2/W
Output noise voltage density, vn At f=10kHz - 1.2 - μV/Hz1/2
Voltage responsivity, Rv At λ=λpeak - 8.8×104 - V/W
Transimpedance, Ki 16 - 640 kV/A
Low cut-off frequency, flo DC coupling - 0 - Hz
High cut-off frequency, fhi - 5 - MHz
Output impedance, Rout - 50 -
Reference voltage output, Vref - 1 - V
Power supply voltage, +Vsup - 3.3 - V
Power consumption, P - 0.15 - W

Spectral response

(Typ, Tamb = 293 K)

Graph showing detectivity (D*) vs. wavelength (λ) from 1.5 to 4.0 micrometers. Detectivity ranges from 1E+08 to 1E+10 cm√Hz/W, starting low, peaking near 3.0 micrometers, then dropping sharply towards 4.0 micrometers.
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Temperature sensor characteristics

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