home-icon/Products / Infrared detectors / HgCdTe (MCT) Photovoltaic / HgCdTe photovoltaic IR detector PVI-3-1x1-TO39-NW-36

HgCdTe room temperature optically immersed photovoltaic infrared detectorPVI-3-1x1-TO39-NW-36

PVI-3-1x1-TO39-NW-36 is an uncooled photovoltaic IR detector based on HgCdTe heterostructure for optimal performance and stability, optically immersed to enhance the parameters. Its specific wavelength (λspec) is 3.0 µm and its optical area (Ao) is 1 mm × 1 mm. The cut‑on wavelength (λcut-on) can be optimized upon request. Applying a reverse bias (Vb) may significantly increase response speed and dynamic range. While this improves performance at high frequencies, be aware that the 1/f noise appearing in biased detectors may reduce performance at low frequencies. The detector is available in the TO39 package without a window.

Features

Spectral range: 2.2 to 3.15 µm

Back-side illuminated

Room temperature operation

Unique immersion lens technology applied

No bias required

No 1/f noise

No minimum order quantity required

Applications

Gas detection, monitoring and analysis: H2O, HF, CH4, C2H2, C2H4, C2H6, NH3

Combustion process control

Green energy

Medical laser control

Detector configuration

Detector symbol
PVI-3-1x1-TO39-NW-36
Detector type
photovoltaic
Active element material epitaxial HgCdTe heterostructure
Cooling no
Temperature sensor n/a
Optical area, Ao 1 mm × 1 mm
Optical immersion hyperhemisphere
Package TO39 (3 pin)
Acceptance angle, Φ ~36 deg.
Window no

Specification

(Tamb = Tchip = 293 K, Vb = 0 V)

Parameter Value

Unit
Min. Typ. Max. -
Cut-on wavelength, λcut-on (10%) - 2.2 - μm
Peak wavelength, λpeak - 2.7±0.2 - μm
Specific wavelength, λspec - 3.0 - μm
Cut-off wavelength, λcut-off (10%) - 3.15 - μm
Detectivity, D* (λpeak, 20 kHz) - 2.0×1011 - cm⋅Hz1/2/W
Detectivity, D* (λspec, 20 kHz) 8.0×1010 1.5×1011 - cm⋅Hz1/2/W
Current responsivity, Ripeak) - 1.4 - A/W
Current responsivity, Rispec) 0.5 0.8 - A/W
Time constant, τ - 350 - ns
Dynamic resistance, Rd 10 50 -

Spectral response

(Typ., Tamb = Tchip = 293 K)

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Temperature sensor characteristics

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