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HgCdTe two-stage thermoelectrically cooled optically immersed photovoltaic infrared detectorPVI-2TE-6-1x1-TO8-wZnSeAR-36
PVI-2TE-6-1x1-TO8-wZnSeAR-36 is a two-stage thermoelectrically cooled (2TE) photovoltaic IR detector based on HgCdTe heterostructure for optimal performance and stability, optically immersed to enhance the parameters. Their specific wavelength (λspec) is 6.0 µm and its optical area (Ao) is 1 mm × 1 mm. The cut‑on wavelength (λcut-on) can be optimized upon request. Applying a reverse bias (Vb) may significantly increase response speed and dynamic range. While this improves performance at high frequencies, be aware that the 1/f noise appearing in biased detectors may reduce performance at low frequencies. The detector is available in TO8 package with a 3 deg. wedged zinc selenide anti-reflection coated window (wZnSeAR) to prevent unwanted interference effects.
Features
Spectral range: 2.6 to 7.0 µm
Back-side illuminated
Two-stage thermoelectrically cooled
Unique immersion lens technology applied
No bias required
No 1/f noise
No minimum order quantity required
Applications
Gas detection, monitoring and analysis: CH4, C2H2, CH2O, HCl, NH3, SO2, C2H6, CO, CO2, NOx, SOx, HNO3
Exhaust gas denitrification
Combustion process control
Contactless temperature measurement: railway transport, industrial and laboratory processes monitoring
Heat-seeking, thermal signature detection
Non-destructive material testing
Biochemical analysis
Laser calibration
Detector configuration
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Detector symbol
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PVI-2TE-6-1x1-TO8-wZnSeAR-36 |
PVI-2TE-6-1x1-TO66-wZnSeAR-36 |
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Detector type
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photovoltaic |
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| Active element material | epitaxial HgCdTe heterostructure | |
| Cooling | 2TE (Tchip ≅ 230 K) | |
| Temperature sensor | thermistor | |
| Optical area, Ao | 1 mm × 1 mm | |
| Optical immersion | hyperhemisphere | |
| Package | 2TE-TO8 | 2TE-TO66 |
| Acceptance angle, Φ | ~36 deg. | |
| Window | wZnSeAR (3 deg. wedged zinc selenide, anti-reflection coating) | |
Specification
(Tamb = 293 K, Tchip = 230 K, Vb = 0 V)
| Parameter | Value |
Unit | |||
| Min. | Typ. | Max. | - | ||
| Cut-on wavelength, λcut-on (10%) | - | 2.6 | - | μm | |
| Peak wavelength, λpeak | - | 5.4±0.2 | - | μm | |
| Specific wavelength, λspec | - | 6.0 | - | μm | |
| Cut-off wavelength, λcut-off (10%) | - | 7.0 | - | μm | |
| Detectivity, D* (λpeak, 20 kHz) | - | 8.0×1010 | - | cm⋅Hz1/2/W | |
| Detectivity, D* (λspec, 20 kHz) | 4.0×1010 | 6.0×1010 | - | cm⋅Hz1/2/W | |
| Current responsivity, Ri (λpeak) | - | 2.5 | - | A/W | |
| Current responsivity, Ri (λspec) | 1.3 | 1.8 | - | A/W | |
| Time constant, τ | - | 50 | - | ns | |
| Dynamic resistance, Rd | 0.3 | 1 | - | kΩ | |
Spectral response
(Typ., Tamb = 293 K, Tchip = 230 K)
Access to file
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Application notes
Temperature sensor characteristics
For more information, please contact us
