HgCdTe (MCT) Photovoltaic DetectorPEMI-10.6
2.0 – 12.0 µm, ambient temperature, optically immersed, photoelectromagnetic
PEMI-10.6 is an uncooled HgCdTe photovoltaic optically immersed IR detectors based on photelectromagnetic effect in the semiconductor – spatial separation of optically generated electrons and holes in the magnetic field. The device is designed for the maximum performance at 10.6 µm and especially useful as a large active area detectors to detect CW and low frequency modulated radiation. These device is mounted in specialized packages with incorporated magnetic circuit inside. 3° wedged zinc selenide anti-reflection coated (wZnSeAR) window prevents unwanted interference effects and protects against pollution.

Features
Spectral range from 2.0 to 12.0 µm
Ambient temperature operation
Hyperhemiimmersion microlens technology applied
No bias required
No 1/f noise
Operation from DC to high frequency
Sensitive to IR radiation polarisation
Specification (Ta = 20°C)
Parameter |
PEMI-10.6 |
|
Active element material
|
epitaxial HgCdTe heterostructure |
|
Optimum wavelength λopt, µm
|
10.6 |
|
Detectivity D*(λpeak), cm![]() |
≥1.6×108
|
|
Detectivity D*(λopt), cm
![]() |
≥1.0×108
|
|
Current responsivity-optical area product Ri(λopt)·LO, A·mm/W |
≥0.01
|
|
Time constant τ, ns
|
≤1.2 |
|
Resistance R, Ω
|
40 to 100 | |
Optical area AO, mm×mm
|
1×1, 2×2 |
|
Package
|
PEM-SMA, PEM-TO8 | |
Acceptance angle, Φ
|
~36° | |
Window
|
wZnSeAR |
Spectral response (Ta = 20°C)

Mechanical layout, mm

PEM-SMA package

PEM-TO8 package
Access to file
Access to this file is limited. In order to download it, please provide all the information and submit the form.
Application notes
Temperature sensor characteristics
Dedicated preamplifiers
Contact form