HgCdTe four-stage thermoelectrically cooled photoconductive infrared detectorsPC-4TE-9-1x1-TO8/TO66-wZnSeAR-70

PC-4TE-9-1x1-TO8-wZnSeAR-70 and PC-4TE-9-1x1-TO66-wZnSeAR-70 are four-stage thermoelectrically cooled (4TE) photoconductive IR detectors based on HgCdTe heterostructures for optimal performance and stability. Their specific wavelength (λ_spec) is 9.0 µm and their active area (A) is 1 mm × 1 mm. The detectors should operate in optimum bias voltage (V_b) and current readout mode. Performance at low frequencies is reduced due to 1/f noise. The detectors are available in TO8 and TO66 packages with a 3 deg. wedged zinc selenide anti-reflection coated window (wZnSeAR) to prevent unwanted interference effects.

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Features

Spectral range: over 10.3 µm

Large active area

Front-side illuminated

Four-stage thermoelectrically cooled

No minimum order quantity required

Applications

Gas detection, monitoring and analysis: SO2, NH

FTIR spectroscopy

Detector configuration

Detector symbol	PC-4TE-9-1x1-TO8-wZnSeAR-70	PC-4TE-9-1x1-TO66-wZnSeAR-70
Detector type	photoconductive
Active element material	epitaxial HgCdTe heterostructure
Cooling	4TE (T_chip ≅ 200 K)
Temperature sensor	thermistor
Active area, A	1 mm × 1 mm
Optical immersion	no
Package	4TE-TO8	4TE-TO66
Acceptance angle, Φ	~70 deg.
Window	wZnSeAR (3 deg. wedged zinc selenide, anti-reflection coating)

Specification

(T_amb = 293 K, T_chip = 200 K, V_b = 0.3 V)

Parameter	Value			Unit
	Min.	Typ.	Max.	-
Peak wavelength, λ_peak	-	7.6±0.5	-	μm
Specific wavelength, λ_spec	-	9.0	-	μm
Cut-off wavelength, λ_cut-off (10%)	-	10.6	-	μm
*Detectivity, D (λ_peak, 20 kHz)**	-	1.9×10⁹	-	cm⋅Hz^1/2/W
*Detectivity, D (λ_spec, 20 kHz)**	1.5×10⁹	1.7×10⁹	-	cm⋅Hz^1/2/W
Current responsivity, R_i (λ_peak)	-	0.6	-	A/W
Current responsivity, R_i (λ_spec)	0.1	0.3	-	A/W
Time constant, τ	-	80	-	ns
Resistance, R	-	-	250	Ω
Bias voltage, V_b	-	0.3	-	V
1/f corner frequency, f_c	-	20	-	kHz