home-icon/Products / Infrared detectors / InAs and InAsSb detectors / InAsSb room temperature photovoltaic infrared detector PVIA-5-1×1-TO39-NW-36

InAsSb room-temperature photovoltaic infrared detectorPVIA-5-1×1-TO39-NW-36

PVIA-5-1×1-TO39-NW-36 is a room-temperature IR photovoltaic detector based on InAsSb heterostructure. It enables the detection of radiation in the range from 2.6 μm to 5.3 μm. The detector element is monolithically integrated with hiperhemispherical GaAs microlens in order to improve the performance of the device. The detector is mounted in the TO39 package without a window. It is mercury and cadmium-free and is fully compliant with the RoHS Directive.

Features

Spectral range: 2.6 to 5.3 µm

III-V material

No minimum order quantity required

Applications

Gas detection (CO, CO2, NOx)

Contactless temperature measurements

Detector configuration

Detector type photovoltaic
Active element material epitaxial InAs heterostructure
Optical area, Ao 1 mm × 1 mm
Immersion hyperhemisphere
Cooling no
Package TO39
Acceptance angle, Φ ~36 deg.
Window no

Specification

(Tchip = 293 K, Vb = 0 V, unless otherwise noted)

Parameter Value
Active element temperature, Tchip = Tamb ~293 K
Cut-on wavelength, λcut-on (10%) ≤ 2.6 μm
Peak wavelength, λpeak 4.5 μm
Cut-off wavelength, λcut-off (10%) ≥ 5.3 μm
Detectivity, D* (λpeak, f = 20 kHz) ≥ 5.0×109 cm·Hz1/2/W
Current responsivity, Ripeak) ≥ 1.2 A/W
Time constant, τ ≤ 15 ns
Resistance, R ≥ 70 Ω

Spectral response

(Typ., Tchip = 293 K)

Mechanical layout and pinout

(Unit: mm)

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Temperature sensor characteristics

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