InAsSb room temperature photovoltaic infrared detectorPVIA-5-1×1-TO39-NW-36
PVIA-5-1×1-TO39-NW-36 is a room-temperature IR photovoltaic detector based on InAsSb heterostructure. It enables the detection of radiation in the range from 2.6 μm to 5.3 μm. The detector element is monolithically integrated with hiperhemispherical GaAs microlens in order to improve the performance of the device. The detector is mounted in the TO39 package without a window. It is mercury and cadmium-free and is fully compliant with the RoHS Directive.
Spectral range: 2.6 to 5.3 µm
No minimum order quantity required
Gas detection (CO, CO2, NOx)
Contactless temperature measurements
|Active element material||epitaxial InAs heterostructure|
|Optical area, Ao||1 mm × 1 mm|
|Acceptance angle, Φ||~36 deg.|
(Tchip = 293 K, Vb = 0 V, unless otherwise noted)
|Active element temperature, Tchip = Tamb||~293 K|
|Cut-on wavelength, λcut-on (10%)||≤ 2.6 μm|
|Peak wavelength, λpeak||4.5 μm|
|Cut-off wavelength, λcut-off (10%)||≥ 5.3 μm|
|Detectivity, D* (λpeak, f = 20 kHz)||≥ 5.0×109 cm·Hz1/2/W|
|Current responsivity, Ri (λpeak)||≥ 1.2 A/W|
|Time constant, τ||≤ 15 ns|
|Resistance, R||≥ 70 Ω|
(Typ., Tchip = 293 K)
Mechanical layout and pinout
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Temperature sensor characteristics
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