InAsSb Photovoltaic DetectorPVIA-2TE-5-1×1-TO8-wAl2O3-36

2.6 – 5.3 µm, two-stage thermoelectrically cooled

PVIA-2TE-5-1×1-TO8-wAl₂O₃-36 is a two-stage thermoelectrically cooled IR photovoltaic detector based on InAsSb alloy, optically immersed in order to improve performance of the device. It does not contain mercury or cadmium and is complying with the RoHS Directive. 3° wedged sapphire (wAl₂O₃) window prevents unwanted interference effects.

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Features

High performance in the 2.6- 5.3 µm spectral range

Two-stage thermoelectrically cooled

Complying with the RoHS Directive

Hyperhemiimmersion microlens technology applied

No bias required

No 1/f noise

Specification (T_a = 20°C, Vb = 0 mV)

Parameter	PVIA-2TE-5-1×1-TO8-wAl₂O₃-36
Active element material	epitaxial InAs heterostructure
Cut-on wavelength λ_cut-on(10%), µm	≤2.6
Peak wavelength λ_peak, µm	4.5±0.6
Cut-off wavelength λ_cut-off(10%), µm	≥5.3
*Detectivity D(λ_peak), cm⋅Hz^1/2/W**	≥4.0×10¹⁰
Current responsivity R_i(λpeak), A/W	≥1.2
Time constant τ, ns	≤5
Resistance R, Ω	≥1.0k
Active element temperature T_det, K	~230K
Optical area A_O, mm×mm	1×1
Package	TO8
Acceptance angle, Φ	~36°
Window	wAl₂O₃