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HgCdTe (MCT) Photovoltaic DetectorPVI-4TE-4
2.2 – 4.2 µm, four-stage thermoelectrically cooled, optically immersed
PVI-4TE-4 is four-stage thermoelectrically cooled IR photovoltaic detector based on sophisticated HgCdTe heterostructure for the best performance and stability, optically immersed in order to improve parameters of the device. The detector is optimized for the maximum performance at λopt = 4.0 μm. Cut‑on wavelength can be optimized upon request. Reverse bias Vb may significantly increase response speed and dynamic range. It also results in improved performance at high frequencies, but 1/f noise that appears in biased devices may reduce performance at low frequencies. 3° wedged sapphire (wAl2O3) window prevents unwanted interference effects.
Features
High performance in the 2.2 - 4.2 µm spectral range
Four-stage thermoelectrically cooled
Hyperhemiimmersion microlens technology applied
No bias required
No 1/f noise
Specification (Ta = 20°C, Vb = 0 mV)
Parameter |
PVI-4TE-4 |
|
|
Active element material
|
epitaxial HgCdTe heterostructure |
|
|
Optimum wavelength λopt, µm
|
4.0 |
|
Detectivity D*(λpeak), cm ⋅Hz1/2/W |
≥6.0×1011
|
|
|
Detectivity D*(λopt), cm
⋅Hz1/2/W |
≥4.0×1011
|
|
|
Current responsivity Ri(λopt), A/W
|
≥1.0
|
|
|
Time constant τ, ns
|
≤100 |
|
|
Resistance-optical area product R⋅AO, Ω⋅cm2
|
≥800 |
|
|
Active element temperature Tdet, K
|
~195 | |
|
Optical area AO, mm×mm
|
0.5×0.5, 1×1 |
|
|
Package
|
TO8, TO66 | |
|
Acceptance angle, Φ
|
~36° | |
|
Window
|
wAl2O3 |
|
Spectral response (Ta = 20°C, Vb = 0 mV)
Mechanical layout, mm
4TE-TO8 package
4TE-TO66 package
Access to file
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Application notes
Temperature sensor characteristics
Dedicated preamplifier
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