home-icon/Products / Infrared detectors / HgCdTe (MCT) Photovoltaic / HgCdTe (MCT) Photovoltaic Detector PVI-3TE-3.4

HgCdTe (MCT) Photovoltaic DetectorPVI-3TE-3.4

2.3 – 3.6 µm, three-stage thermoelectrically cooled, optically immersed

PVI-3TE-3.4 is three-stage thermoelectrically cooled IR photovoltaic detector based on sophisticated HgCdTe heterostructure for the best performance and stability, optically immersed in order to improve parameters of the device. The detector is optimized for the maximum performance at λopt = 3.4 μm. Cut‑on wavelength can be optimized upon request. Reverse bias Vb may significantly increase response speed and dynamic range. It also results in improved performance at high frequencies, but 1/f noise that appears in biased devices may reduce performance at low frequencies. 3° wedged sapphire (wAl2O3) window prevents unwanted interference effects.


High performance in the 2.3 – 3.6 µm spectral range

Three-stage thermoelectrically cooled

Hyperhemiimmersion microlens technology applied

No bias required

No 1/f noise

Specification (Ta = 20°C, Vb = 0 mV)

Active element material
epitaxial HgCdTe heterostructure
Optimum wavelength λopt, µm
Detectivity D*(λpeak), cm⋅Hz1/2/W
Detectivity D*(λopt), cm⋅Hz1/2/W
Current responsivity Riopt), A/W
Time constant τ, ns
Resistance-optical area product R⋅AO, Ω⋅cm2
Active element temperature Tdet, K
Optical area AO, mm×mm
0.5×0.5, 1×1
TO8, TO66
Acceptance angle, Φ

Spectral response (Ta = 20°C, Vb = 0 mV)


Mechanical layout, mm


3TE-TO8 package


3TE-TO66 package


Access to file

Access to this file is limited. In order to download it, please provide all the information and submit the form.


Application notes password-padlock

Temperature sensor characteristics

I agree to the processing of personal data with the VIGO Privacy Policy


Thank you!

This file has been sended to your e-mail.

Dedicated preamplifier

Contact form

For more information, please contact us directly: