HgCdTe (MCT) Photovoltaic DetectorPVI-2TE-6-1×1-TO8-wZnSeAR-36
3.0 – 6.7 µm, two-stage thermoelectrically cooled, optically immersed
PVI-2TE-6-1×1-TO8-wZnSeAR-36 is two-stage thermoelectrically cooled IR photovoltaic detector based on sophisticated HgCdTe heterostructure for the best performance and stability. The device is optimized for the maximum performance at λopt = 6 µm. Detector element is monolithically integrated with hyperhemispherical GaAs microlens in order to improve performance of the device. Reverse bias Vb may significantly increase response speed and dynamic range. 3° wedged zinc selenide anti-reflection coated (wZnSeAR) window prevents unwanted interference effects.

Features
High performance in 3.0 - 6.7 µm spectral range
Two-stage thermoelctrically cooled
Hyperhemiimmersion microlens technology applied
No bias required
No 1/f noise
Wide dynamic range
Versatility
Quantity discounted price
Fast delivery
Applications
Gas detection, monitoring and analysis (CO, CO2, NH3, NOx)
Flue gas denitrification
Fuel combustion monitoring at power plants and other industrial facilities
Contactless temperature measurements
Specification (Ta = 20°C, Vb = 0 mV)
Parameter |
PVI-2TE-6-1×1-TO8-wZnSeAR-36 |
|
Active element material
|
epitaxial HgCdTe heterostructure |
|
Cut-on wavelength λcut-on (10%) µm
|
3.0±1.0 | |
Peak wavelength λpeak, µm
|
5.2±0.5 | |
Optimum wavelength λopt, µm
|
6.0 |
|
Cut-off wavelength λcut-off (10%) µm
|
6.7±0.3 | |
Detectivity D*(λpeak), cm![]() |
≥7.0×1010
|
|
Detectivity D*(λopt), cm
![]() |
≥4.0×1010
|
|
Current responsivity Ri(λpeak), A/W
|
≥2.7
|
|
Current responsivity Ri(λopt), A/W
|
≥1.5
|
|
Time constant τ, ns
|
≤50 |
|
Resistance R, Ω
|
≥200 |
|
Active element temperature Tdet, K
|
~230 | |
Optical area AO, mm×mm
|
1×1 |
|
Package
|
TO8 | |
Acceptance angle, Φ
|
~36° | |
Window
|
wZnSeAR |
Spectral response (Ta = 20°C, Vb = 0 mV)

Mechanical layout, mm

2TE-TO8 package
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Application notes
Temperature sensor characteristics
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